Automated measurement and analysis of sidewall roughness using three-dimensional atomic force microscopy

As semiconductor device architecture develops, from planar field-effect transistors (FET) to FinFET and gate-all-around (GAA), there is an increased need to measure 3D structure sidewalls precisely. Here, we present a 3-Dimensional Atomic Force Microscope (3D-AFM), a powerful 3D metrology tool to me...

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Detalles Bibliográficos
Autores principales: Yoo, Su-Been, Yun, Seong-Hun, Jo, Ah-Jin, Cho, Sang-Joon, Cho, Haneol, Lee, Jun-Ho, Ahn, Byoung-Woon
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer Singapore 2022
Materias:
Research
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8904671/
https://www.ncbi.nlm.nih.gov/pubmed/35258764
http://dx.doi.org/10.1186/s42649-022-00070-5

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8904671/
https://www.ncbi.nlm.nih.gov/pubmed/35258764
http://dx.doi.org/10.1186/s42649-022-00070-5

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