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Interfacial Polarization of Thin Alq(3), Gaq(3), and Erq(3) Films on GaN(0001)

This report presents results of research on electronic structure of three interfaces composed of organic layers of Alq(3), Gaq(3), or Erq(3) deposited on GaN semiconductor. The formation of the interfaces and their characterization have been performed in situ under ultrahigh vacuum conditions. Thin...

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Detalles Bibliográficos
Autores principales:	Grodzicki, Miłosz, Sito, Jakub, Lewandków, Rafał, Mazur, Piotr, Ciszewski, Antoni
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2022
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8910984/ https://www.ncbi.nlm.nih.gov/pubmed/35268914 http://dx.doi.org/10.3390/ma15051671

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