Cargando…
Review of Highly Mismatched III-V Heteroepitaxy Growth on (001) Silicon
Si-based group III-V material enables a multitude of applications and functionalities of the novel optoelectronic integration chips (OEICs) owing to their excellent optoelectronic properties and compatibility with the mature Si CMOS process technology. To achieve high performance OEICs, the crystal...
Autores principales: | Du, Yong, Xu, Buqing, Wang, Guilei, Miao, Yuanhao, Li, Ben, Kong, Zhenzhen, Dong, Yan, Wang, Wenwu, Radamson, Henry H. |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2022
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8912022/ https://www.ncbi.nlm.nih.gov/pubmed/35269230 http://dx.doi.org/10.3390/nano12050741 |
Ejemplares similares
-
Investigation of the Heteroepitaxial Process Optimization of Ge Layers on Si (001) by RPCVD
por: Du, Yong, et al.
Publicado: (2021) -
Reduced Dislocation of GaAs Layer Grown on Ge-Buffered Si (001) Substrate Using Dislocation Filter Layers for an O-Band InAs/GaAs Quantum Dot Narrow-Ridge Laser
por: Du, Yong, et al.
Publicado: (2022) -
Investigation of the Integration of Strained Ge Channel with Si-Based FinFETs
por: Xu, Buqing, et al.
Publicado: (2022) -
Monolithic Integration of O-Band InAs Quantum Dot Lasers with Engineered GaAs Virtual Substrate Based on Silicon
por: Xu, Buqing, et al.
Publicado: (2022) -
Strain Modulation of Selectively and/or Globally Grown Ge Layers
por: Du, Yong, et al.
Publicado: (2021)