Flexible Sol-Gel—Processed Y(2)O(3) RRAM Devices Obtained via UV/Ozone-Assisted Photochemical Annealing Process

Flexible indium tin oxide (ITO)/Y(2)O(3)/Ag resistive random access memory (RRAM) devices were successfully fabricated using a thermal-energy-free ultraviolet (UV)/ozone-assisted photochemical annealing process. Using the UV/ozone-assisted photochemical process, the organic residue can be eliminated...

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Detalles Bibliográficos
Autores principales: Kim, Hyeon-Joong, Kim, Do-Won, Lee, Won-Yong, Kim, Kyoungdu, Lee, Sin-Hyung, Bae, Jin-Hyuk, Kang, In-Man, Kim, Kwangeun, Jang, Jaewon
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8912058/
https://www.ncbi.nlm.nih.gov/pubmed/35269129
http://dx.doi.org/10.3390/ma15051899

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8912058/
https://www.ncbi.nlm.nih.gov/pubmed/35269129
http://dx.doi.org/10.3390/ma15051899

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