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Control of Ni/β-Ga(2)O(3) Vertical Schottky Diode Output Parameters at Forward Bias by Insertion of a Graphene Layer

Controlling the Schottky barrier height ([Formula: see text]) and other parameters of Schottky barrier diodes (SBD) is critical for many applications. In this work, the effect of inserting a graphene interfacial monolayer between a Ni Schottky metal and a β- [Formula: see text] semiconductor was inv...

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Detalles Bibliográficos
Autores principales:	Labed, Madani, Sengouga, Nouredine, Rim, You Seung
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2022
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8912321/ https://www.ncbi.nlm.nih.gov/pubmed/35269314 http://dx.doi.org/10.3390/nano12050827

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