An enhanced two-dimensional hole gas (2DHG) C–H diamond with positive surface charge model for advanced normally-off MOSFET devices

Though the complementary power field effect transistors (FETs), e.g., metal–oxide–semiconductor-FETs (MOSFETs) based on wide bandgap materials, enable low switching losses and on-resistance, p-channel FETs are not feasible in any wide bandgap material other than diamond. In this paper, we propose th...

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Detalles Bibliográficos
Autores principales: Alhasani, Reem, Yabe, Taichi, Iyama, Yutaro, Oi, Nobutaka, Imanishi, Shoichiro, Nguyen, Quang Ngoc, Kawarada, Hiroshi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8913839/
https://www.ncbi.nlm.nih.gov/pubmed/35273177
http://dx.doi.org/10.1038/s41598-022-05180-4

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8913839/
https://www.ncbi.nlm.nih.gov/pubmed/35273177
http://dx.doi.org/10.1038/s41598-022-05180-4

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