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An enhanced two-dimensional hole gas (2DHG) C–H diamond with positive surface charge model for advanced normally-off MOSFET devices
Though the complementary power field effect transistors (FETs), e.g., metal–oxide–semiconductor-FETs (MOSFETs) based on wide bandgap materials, enable low switching losses and on-resistance, p-channel FETs are not feasible in any wide bandgap material other than diamond. In this paper, we propose th...
| Autores principales: | , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8913839/ https://www.ncbi.nlm.nih.gov/pubmed/35273177 http://dx.doi.org/10.1038/s41598-022-05180-4 |