Optimization of Pixel Size and Electrode Structure for Ge:Ga Terahertz Photoconductive Detectors

To investigate the effects of the pixel sizes and the electrode structures on the performance of Ge-based terahertz (THz) photoconductive detectors, vertical structure Ge:Ga detectors with different structure parameters were fabricated. The characteristics of the detectors were investigated at 4.2 K, including the spectral response, blackbody response (R(bb)), dark current density-voltage characters, and noise equivalent power (NEP). The detector with the pixel radius of 400 μm and the top electrode of the ring structure showed the best performance. The spectral response band of this detector was about 20–180 μm. The R(bb) of this detector reached as high as 0.92 A/W, and the NEP reached 5.4 × 10(−13) W/ [Formula: see text] at 0.5 V. Compared with the detector with a pixel radius of 1000 μm and the top electrode of the spot structure, the R(bb) increased nearly six times, and the NEP decreased nearly 12 times. This is due to the fact that the optimized parameters increased the equivalent electric field of the detector. This work provides a route for future research into large-scale array Ge-based THz detectors.