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pH Measurement at Elevated Temperature with Vessel Gate and Oxygen-Terminated Diamond Solution Gate Field Effect Transistors

Diamond has many appealing properties, including biocompatibility, ease of surface modification, and chemical–physical stability. In this study, the temperature dependence of the pH-sensitivity of a oxygen-terminated boron-doped diamond solution gate FET (C-O BDD SGFET) is reported. The C-O BDD SGFE...

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Detalles Bibliográficos
Autores principales: Kawaguchi, Shuto, Nomoto, Reona, Sato, Hirotaka, Takarada, Teruaki, Chang, Yu Hao, Kawarada, Hiroshi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8915005/
https://www.ncbi.nlm.nih.gov/pubmed/35270954
http://dx.doi.org/10.3390/s22051807
_version_ 1784667900431302656
author Kawaguchi, Shuto
Nomoto, Reona
Sato, Hirotaka
Takarada, Teruaki
Chang, Yu Hao
Kawarada, Hiroshi
author_facet Kawaguchi, Shuto
Nomoto, Reona
Sato, Hirotaka
Takarada, Teruaki
Chang, Yu Hao
Kawarada, Hiroshi
author_sort Kawaguchi, Shuto
collection PubMed
description Diamond has many appealing properties, including biocompatibility, ease of surface modification, and chemical–physical stability. In this study, the temperature dependence of the pH-sensitivity of a oxygen-terminated boron-doped diamond solution gate FET (C-O BDD SGFET) is reported. The C-O BDD SGFET operated in an electrolyte solution at 95 °C. At 80 °C, the pH sensitivity of C-O BDD SGFET dropped to 4.27 mV/pH. As a result, we succeeded in developing a highly sensitive pH sensing system at −54.6 mV/pH at 80 °C by combining it with a highly pH sensitive stainless-steel vessel.
format Online
Article
Text
id pubmed-8915005
institution National Center for Biotechnology Information
language English
publishDate 2022
publisher MDPI
record_format MEDLINE/PubMed
spelling pubmed-89150052022-03-12 pH Measurement at Elevated Temperature with Vessel Gate and Oxygen-Terminated Diamond Solution Gate Field Effect Transistors Kawaguchi, Shuto Nomoto, Reona Sato, Hirotaka Takarada, Teruaki Chang, Yu Hao Kawarada, Hiroshi Sensors (Basel) Communication Diamond has many appealing properties, including biocompatibility, ease of surface modification, and chemical–physical stability. In this study, the temperature dependence of the pH-sensitivity of a oxygen-terminated boron-doped diamond solution gate FET (C-O BDD SGFET) is reported. The C-O BDD SGFET operated in an electrolyte solution at 95 °C. At 80 °C, the pH sensitivity of C-O BDD SGFET dropped to 4.27 mV/pH. As a result, we succeeded in developing a highly sensitive pH sensing system at −54.6 mV/pH at 80 °C by combining it with a highly pH sensitive stainless-steel vessel. MDPI 2022-02-25 /pmc/articles/PMC8915005/ /pubmed/35270954 http://dx.doi.org/10.3390/s22051807 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Communication
Kawaguchi, Shuto
Nomoto, Reona
Sato, Hirotaka
Takarada, Teruaki
Chang, Yu Hao
Kawarada, Hiroshi
pH Measurement at Elevated Temperature with Vessel Gate and Oxygen-Terminated Diamond Solution Gate Field Effect Transistors
title pH Measurement at Elevated Temperature with Vessel Gate and Oxygen-Terminated Diamond Solution Gate Field Effect Transistors
title_full pH Measurement at Elevated Temperature with Vessel Gate and Oxygen-Terminated Diamond Solution Gate Field Effect Transistors
title_fullStr pH Measurement at Elevated Temperature with Vessel Gate and Oxygen-Terminated Diamond Solution Gate Field Effect Transistors
title_full_unstemmed pH Measurement at Elevated Temperature with Vessel Gate and Oxygen-Terminated Diamond Solution Gate Field Effect Transistors
title_short pH Measurement at Elevated Temperature with Vessel Gate and Oxygen-Terminated Diamond Solution Gate Field Effect Transistors
title_sort ph measurement at elevated temperature with vessel gate and oxygen-terminated diamond solution gate field effect transistors
topic Communication
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8915005/
https://www.ncbi.nlm.nih.gov/pubmed/35270954
http://dx.doi.org/10.3390/s22051807
work_keys_str_mv AT kawaguchishuto phmeasurementatelevatedtemperaturewithvesselgateandoxygenterminateddiamondsolutiongatefieldeffecttransistors
AT nomotoreona phmeasurementatelevatedtemperaturewithvesselgateandoxygenterminateddiamondsolutiongatefieldeffecttransistors
AT satohirotaka phmeasurementatelevatedtemperaturewithvesselgateandoxygenterminateddiamondsolutiongatefieldeffecttransistors
AT takaradateruaki phmeasurementatelevatedtemperaturewithvesselgateandoxygenterminateddiamondsolutiongatefieldeffecttransistors
AT changyuhao phmeasurementatelevatedtemperaturewithvesselgateandoxygenterminateddiamondsolutiongatefieldeffecttransistors
AT kawaradahiroshi phmeasurementatelevatedtemperaturewithvesselgateandoxygenterminateddiamondsolutiongatefieldeffecttransistors