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pH Measurement at Elevated Temperature with Vessel Gate and Oxygen-Terminated Diamond Solution Gate Field Effect Transistors
Diamond has many appealing properties, including biocompatibility, ease of surface modification, and chemical–physical stability. In this study, the temperature dependence of the pH-sensitivity of a oxygen-terminated boron-doped diamond solution gate FET (C-O BDD SGFET) is reported. The C-O BDD SGFE...
Autores principales: | , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2022
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8915005/ https://www.ncbi.nlm.nih.gov/pubmed/35270954 http://dx.doi.org/10.3390/s22051807 |
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author | Kawaguchi, Shuto Nomoto, Reona Sato, Hirotaka Takarada, Teruaki Chang, Yu Hao Kawarada, Hiroshi |
author_facet | Kawaguchi, Shuto Nomoto, Reona Sato, Hirotaka Takarada, Teruaki Chang, Yu Hao Kawarada, Hiroshi |
author_sort | Kawaguchi, Shuto |
collection | PubMed |
description | Diamond has many appealing properties, including biocompatibility, ease of surface modification, and chemical–physical stability. In this study, the temperature dependence of the pH-sensitivity of a oxygen-terminated boron-doped diamond solution gate FET (C-O BDD SGFET) is reported. The C-O BDD SGFET operated in an electrolyte solution at 95 °C. At 80 °C, the pH sensitivity of C-O BDD SGFET dropped to 4.27 mV/pH. As a result, we succeeded in developing a highly sensitive pH sensing system at −54.6 mV/pH at 80 °C by combining it with a highly pH sensitive stainless-steel vessel. |
format | Online Article Text |
id | pubmed-8915005 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2022 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-89150052022-03-12 pH Measurement at Elevated Temperature with Vessel Gate and Oxygen-Terminated Diamond Solution Gate Field Effect Transistors Kawaguchi, Shuto Nomoto, Reona Sato, Hirotaka Takarada, Teruaki Chang, Yu Hao Kawarada, Hiroshi Sensors (Basel) Communication Diamond has many appealing properties, including biocompatibility, ease of surface modification, and chemical–physical stability. In this study, the temperature dependence of the pH-sensitivity of a oxygen-terminated boron-doped diamond solution gate FET (C-O BDD SGFET) is reported. The C-O BDD SGFET operated in an electrolyte solution at 95 °C. At 80 °C, the pH sensitivity of C-O BDD SGFET dropped to 4.27 mV/pH. As a result, we succeeded in developing a highly sensitive pH sensing system at −54.6 mV/pH at 80 °C by combining it with a highly pH sensitive stainless-steel vessel. MDPI 2022-02-25 /pmc/articles/PMC8915005/ /pubmed/35270954 http://dx.doi.org/10.3390/s22051807 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Communication Kawaguchi, Shuto Nomoto, Reona Sato, Hirotaka Takarada, Teruaki Chang, Yu Hao Kawarada, Hiroshi pH Measurement at Elevated Temperature with Vessel Gate and Oxygen-Terminated Diamond Solution Gate Field Effect Transistors |
title | pH Measurement at Elevated Temperature with Vessel Gate and Oxygen-Terminated Diamond Solution Gate Field Effect Transistors |
title_full | pH Measurement at Elevated Temperature with Vessel Gate and Oxygen-Terminated Diamond Solution Gate Field Effect Transistors |
title_fullStr | pH Measurement at Elevated Temperature with Vessel Gate and Oxygen-Terminated Diamond Solution Gate Field Effect Transistors |
title_full_unstemmed | pH Measurement at Elevated Temperature with Vessel Gate and Oxygen-Terminated Diamond Solution Gate Field Effect Transistors |
title_short | pH Measurement at Elevated Temperature with Vessel Gate and Oxygen-Terminated Diamond Solution Gate Field Effect Transistors |
title_sort | ph measurement at elevated temperature with vessel gate and oxygen-terminated diamond solution gate field effect transistors |
topic | Communication |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8915005/ https://www.ncbi.nlm.nih.gov/pubmed/35270954 http://dx.doi.org/10.3390/s22051807 |
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