Designing Conductive‐Bridge Phase‐Change Memory to Enable Ultralow Programming Power (Adv. Sci. 8/2022)

Conductive‐Bridge Phase‐Change Memory In article number 2103478, Ming Xu, Xiangshui Miao, Wei Zhang, En Ma, and co‐workers design a conductive‐bridge phase‐change memory, forming self‐patterned heterogeneous networks of crystalline and amorphous nanodomains. The switching proceeds via forming/breaki...

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Detalles Bibliográficos
Autores principales: Yang, Zhe, Li, Bowen, Wang, Jiang‐Jing, Wang, Xu‐Dong, Xu, Meng, Tong, Hao, Cheng, Xiaomin, Lu, Lu, Jia, Chunlin, Xu, Ming, Miao, Xiangshui, Zhang, Wei, Ma, En
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2022
Materias:
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Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8922096/
http://dx.doi.org/10.1002/advs.202270051
Descripción
Sumario:Conductive‐Bridge Phase‐Change Memory In article number 2103478, Ming Xu, Xiangshui Miao, Wei Zhang, En Ma, and co‐workers design a conductive‐bridge phase‐change memory, forming self‐patterned heterogeneous networks of crystalline and amorphous nanodomains. The switching proceeds via forming/breaking nanobridges that link up the crystalline domains into a conductive path, resulting in ultralow power consumptions for memory programming. [Image: see text]

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