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Designing Conductive‐Bridge Phase‐Change Memory to Enable Ultralow Programming Power (Adv. Sci. 8/2022)
Conductive‐Bridge Phase‐Change Memory In article number 2103478, Ming Xu, Xiangshui Miao, Wei Zhang, En Ma, and co‐workers design a conductive‐bridge phase‐change memory, forming self‐patterned heterogeneous networks of crystalline and amorphous nanodomains. The switching proceeds via forming/breaki...
Autores principales: | , , , , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
John Wiley and Sons Inc.
2022
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8922096/ http://dx.doi.org/10.1002/advs.202270051 |
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author | Yang, Zhe Li, Bowen Wang, Jiang‐Jing Wang, Xu‐Dong Xu, Meng Tong, Hao Cheng, Xiaomin Lu, Lu Jia, Chunlin Xu, Ming Miao, Xiangshui Zhang, Wei Ma, En |
author_facet | Yang, Zhe Li, Bowen Wang, Jiang‐Jing Wang, Xu‐Dong Xu, Meng Tong, Hao Cheng, Xiaomin Lu, Lu Jia, Chunlin Xu, Ming Miao, Xiangshui Zhang, Wei Ma, En |
author_sort | Yang, Zhe |
collection | PubMed |
description | Conductive‐Bridge Phase‐Change Memory In article number 2103478, Ming Xu, Xiangshui Miao, Wei Zhang, En Ma, and co‐workers design a conductive‐bridge phase‐change memory, forming self‐patterned heterogeneous networks of crystalline and amorphous nanodomains. The switching proceeds via forming/breaking nanobridges that link up the crystalline domains into a conductive path, resulting in ultralow power consumptions for memory programming. [Image: see text] |
format | Online Article Text |
id | pubmed-8922096 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2022 |
publisher | John Wiley and Sons Inc. |
record_format | MEDLINE/PubMed |
spelling | pubmed-89220962022-03-21 Designing Conductive‐Bridge Phase‐Change Memory to Enable Ultralow Programming Power (Adv. Sci. 8/2022) Yang, Zhe Li, Bowen Wang, Jiang‐Jing Wang, Xu‐Dong Xu, Meng Tong, Hao Cheng, Xiaomin Lu, Lu Jia, Chunlin Xu, Ming Miao, Xiangshui Zhang, Wei Ma, En Adv Sci (Weinh) Back Cover Conductive‐Bridge Phase‐Change Memory In article number 2103478, Ming Xu, Xiangshui Miao, Wei Zhang, En Ma, and co‐workers design a conductive‐bridge phase‐change memory, forming self‐patterned heterogeneous networks of crystalline and amorphous nanodomains. The switching proceeds via forming/breaking nanobridges that link up the crystalline domains into a conductive path, resulting in ultralow power consumptions for memory programming. [Image: see text] John Wiley and Sons Inc. 2022-03-15 /pmc/articles/PMC8922096/ http://dx.doi.org/10.1002/advs.202270051 Text en © 2022 Wiley‐VCH GmbH https://creativecommons.org/licenses/by-nc/4.0/This is an open access article under the terms of the http://creativecommons.org/licenses/by-nc/4.0/ (https://creativecommons.org/licenses/by-nc/4.0/) License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited and is not used for commercial purposes. |
spellingShingle | Back Cover Yang, Zhe Li, Bowen Wang, Jiang‐Jing Wang, Xu‐Dong Xu, Meng Tong, Hao Cheng, Xiaomin Lu, Lu Jia, Chunlin Xu, Ming Miao, Xiangshui Zhang, Wei Ma, En Designing Conductive‐Bridge Phase‐Change Memory to Enable Ultralow Programming Power (Adv. Sci. 8/2022) |
title | Designing Conductive‐Bridge Phase‐Change Memory to Enable Ultralow Programming Power (Adv. Sci. 8/2022) |
title_full | Designing Conductive‐Bridge Phase‐Change Memory to Enable Ultralow Programming Power (Adv. Sci. 8/2022) |
title_fullStr | Designing Conductive‐Bridge Phase‐Change Memory to Enable Ultralow Programming Power (Adv. Sci. 8/2022) |
title_full_unstemmed | Designing Conductive‐Bridge Phase‐Change Memory to Enable Ultralow Programming Power (Adv. Sci. 8/2022) |
title_short | Designing Conductive‐Bridge Phase‐Change Memory to Enable Ultralow Programming Power (Adv. Sci. 8/2022) |
title_sort | designing conductive‐bridge phase‐change memory to enable ultralow programming power (adv. sci. 8/2022) |
topic | Back Cover |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8922096/ http://dx.doi.org/10.1002/advs.202270051 |
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