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Designing Conductive‐Bridge Phase‐Change Memory to Enable Ultralow Programming Power (Adv. Sci. 8/2022)

Conductive‐Bridge Phase‐Change Memory In article number 2103478, Ming Xu, Xiangshui Miao, Wei Zhang, En Ma, and co‐workers design a conductive‐bridge phase‐change memory, forming self‐patterned heterogeneous networks of crystalline and amorphous nanodomains. The switching proceeds via forming/breaki...

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Detalles Bibliográficos
Autores principales: Yang, Zhe, Li, Bowen, Wang, Jiang‐Jing, Wang, Xu‐Dong, Xu, Meng, Tong, Hao, Cheng, Xiaomin, Lu, Lu, Jia, Chunlin, Xu, Ming, Miao, Xiangshui, Zhang, Wei, Ma, En
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8922096/
http://dx.doi.org/10.1002/advs.202270051
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author Yang, Zhe
Li, Bowen
Wang, Jiang‐Jing
Wang, Xu‐Dong
Xu, Meng
Tong, Hao
Cheng, Xiaomin
Lu, Lu
Jia, Chunlin
Xu, Ming
Miao, Xiangshui
Zhang, Wei
Ma, En
author_facet Yang, Zhe
Li, Bowen
Wang, Jiang‐Jing
Wang, Xu‐Dong
Xu, Meng
Tong, Hao
Cheng, Xiaomin
Lu, Lu
Jia, Chunlin
Xu, Ming
Miao, Xiangshui
Zhang, Wei
Ma, En
author_sort Yang, Zhe
collection PubMed
description Conductive‐Bridge Phase‐Change Memory In article number 2103478, Ming Xu, Xiangshui Miao, Wei Zhang, En Ma, and co‐workers design a conductive‐bridge phase‐change memory, forming self‐patterned heterogeneous networks of crystalline and amorphous nanodomains. The switching proceeds via forming/breaking nanobridges that link up the crystalline domains into a conductive path, resulting in ultralow power consumptions for memory programming. [Image: see text]
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spelling pubmed-89220962022-03-21 Designing Conductive‐Bridge Phase‐Change Memory to Enable Ultralow Programming Power (Adv. Sci. 8/2022) Yang, Zhe Li, Bowen Wang, Jiang‐Jing Wang, Xu‐Dong Xu, Meng Tong, Hao Cheng, Xiaomin Lu, Lu Jia, Chunlin Xu, Ming Miao, Xiangshui Zhang, Wei Ma, En Adv Sci (Weinh) Back Cover Conductive‐Bridge Phase‐Change Memory In article number 2103478, Ming Xu, Xiangshui Miao, Wei Zhang, En Ma, and co‐workers design a conductive‐bridge phase‐change memory, forming self‐patterned heterogeneous networks of crystalline and amorphous nanodomains. The switching proceeds via forming/breaking nanobridges that link up the crystalline domains into a conductive path, resulting in ultralow power consumptions for memory programming. [Image: see text] John Wiley and Sons Inc. 2022-03-15 /pmc/articles/PMC8922096/ http://dx.doi.org/10.1002/advs.202270051 Text en © 2022 Wiley‐VCH GmbH https://creativecommons.org/licenses/by-nc/4.0/This is an open access article under the terms of the http://creativecommons.org/licenses/by-nc/4.0/ (https://creativecommons.org/licenses/by-nc/4.0/) License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited and is not used for commercial purposes.
spellingShingle Back Cover
Yang, Zhe
Li, Bowen
Wang, Jiang‐Jing
Wang, Xu‐Dong
Xu, Meng
Tong, Hao
Cheng, Xiaomin
Lu, Lu
Jia, Chunlin
Xu, Ming
Miao, Xiangshui
Zhang, Wei
Ma, En
Designing Conductive‐Bridge Phase‐Change Memory to Enable Ultralow Programming Power (Adv. Sci. 8/2022)
title Designing Conductive‐Bridge Phase‐Change Memory to Enable Ultralow Programming Power (Adv. Sci. 8/2022)
title_full Designing Conductive‐Bridge Phase‐Change Memory to Enable Ultralow Programming Power (Adv. Sci. 8/2022)
title_fullStr Designing Conductive‐Bridge Phase‐Change Memory to Enable Ultralow Programming Power (Adv. Sci. 8/2022)
title_full_unstemmed Designing Conductive‐Bridge Phase‐Change Memory to Enable Ultralow Programming Power (Adv. Sci. 8/2022)
title_short Designing Conductive‐Bridge Phase‐Change Memory to Enable Ultralow Programming Power (Adv. Sci. 8/2022)
title_sort designing conductive‐bridge phase‐change memory to enable ultralow programming power (adv. sci. 8/2022)
topic Back Cover
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8922096/
http://dx.doi.org/10.1002/advs.202270051
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