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Use of Ambipolar Dual-Gate Carbon Nanotube Field-Effect Transistor to Configure Exclusive-OR Gate

[Image: see text] As the physical scaling limit of silicon-based integrated circuits is approached, new materials and device structures become necessary. The exclusive-OR (XOR) gate is a basic logic gate performed as a building block for digital adder and encrypted circuits. Here, we suggest that us...

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Detalles Bibliográficos
Autores principales: Liu, Xueyuan, Sun, Bing, Huang, Kailiang, Feng, Chao, Li, Xiao, Zhang, Zhen, Wang, Wenke, Zhang, Xin’gang, Huang, Zhi, Liu, Huaping, Chang, Hudong, Jia, Rui, Liu, Honggang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2022
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8928521/
https://www.ncbi.nlm.nih.gov/pubmed/35309449
http://dx.doi.org/10.1021/acsomega.1c07088
Descripción
Sumario:[Image: see text] As the physical scaling limit of silicon-based integrated circuits is approached, new materials and device structures become necessary. The exclusive-OR (XOR) gate is a basic logic gate performed as a building block for digital adder and encrypted circuits. Here, we suggest that using the ambipolar property of carbon nanotubes and the threshold modulation ability of dual-gate field-effect transistors, an XOR gate can be constructed in only one transistor. For a traditional XOR gate, 4 to 6 transistors are needed, and this low-footprint topology could be employed in the future for hyperscaling and three-dimensional logic and memory transistor integration.