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Temperature dependence of the thermo-optic coefficient in 4H-SiC and GaN slabs at the wavelength of 1550 nm
The refractive index and its variation with temperature, i.e. the thermo-optic coefficient, are basic optical parameters for all those semiconductors that are used in the fabrication of linear and non-linear opto-electronic devices and systems. Recently, 4H single-crystal silicon carbide (4H-SiC) an...
Autores principales: | , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
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Nature Publishing Group UK
2022
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8938550/ https://www.ncbi.nlm.nih.gov/pubmed/35314709 http://dx.doi.org/10.1038/s41598-022-08232-x |
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author | Rao, Sandro Mallemace, Elisa D. Cocorullo, Giuseppe Faggio, Giuliana Messina, Giacomo Della Corte, Francesco G. |
author_facet | Rao, Sandro Mallemace, Elisa D. Cocorullo, Giuseppe Faggio, Giuliana Messina, Giacomo Della Corte, Francesco G. |
author_sort | Rao, Sandro |
collection | PubMed |
description | The refractive index and its variation with temperature, i.e. the thermo-optic coefficient, are basic optical parameters for all those semiconductors that are used in the fabrication of linear and non-linear opto-electronic devices and systems. Recently, 4H single-crystal silicon carbide (4H-SiC) and gallium nitride (GaN) have emerged as excellent building materials for high power and high-temperature electronics, and wide parallel applications in photonics can be consequently forecasted in the near future, in particular in the infrared telecommunication band of λ = 1500–1600 nm. In this paper, the thermo-optic coefficient (dn/dT) is experimentally measured in 4H-SiC and GaN substrates, from room temperature to 480 K, at the wavelength of 1550 nm. Specifically, the substrates, forming natural Fabry–Perot etalons, are exploited within a simple hybrid fiber free-space optical interferometric system to take accurate measurements of the transmitted optical power in the said temperature range. It is found that, for both semiconductors, dn/dT is itself remarkably temperature-dependent, in particular quadratically for GaN and almost linearly for 4H-SiC. |
format | Online Article Text |
id | pubmed-8938550 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2022 |
publisher | Nature Publishing Group UK |
record_format | MEDLINE/PubMed |
spelling | pubmed-89385502022-03-28 Temperature dependence of the thermo-optic coefficient in 4H-SiC and GaN slabs at the wavelength of 1550 nm Rao, Sandro Mallemace, Elisa D. Cocorullo, Giuseppe Faggio, Giuliana Messina, Giacomo Della Corte, Francesco G. Sci Rep Article The refractive index and its variation with temperature, i.e. the thermo-optic coefficient, are basic optical parameters for all those semiconductors that are used in the fabrication of linear and non-linear opto-electronic devices and systems. Recently, 4H single-crystal silicon carbide (4H-SiC) and gallium nitride (GaN) have emerged as excellent building materials for high power and high-temperature electronics, and wide parallel applications in photonics can be consequently forecasted in the near future, in particular in the infrared telecommunication band of λ = 1500–1600 nm. In this paper, the thermo-optic coefficient (dn/dT) is experimentally measured in 4H-SiC and GaN substrates, from room temperature to 480 K, at the wavelength of 1550 nm. Specifically, the substrates, forming natural Fabry–Perot etalons, are exploited within a simple hybrid fiber free-space optical interferometric system to take accurate measurements of the transmitted optical power in the said temperature range. It is found that, for both semiconductors, dn/dT is itself remarkably temperature-dependent, in particular quadratically for GaN and almost linearly for 4H-SiC. Nature Publishing Group UK 2022-03-21 /pmc/articles/PMC8938550/ /pubmed/35314709 http://dx.doi.org/10.1038/s41598-022-08232-x Text en © The Author(s) 2022 https://creativecommons.org/licenses/by/4.0/Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) . |
spellingShingle | Article Rao, Sandro Mallemace, Elisa D. Cocorullo, Giuseppe Faggio, Giuliana Messina, Giacomo Della Corte, Francesco G. Temperature dependence of the thermo-optic coefficient in 4H-SiC and GaN slabs at the wavelength of 1550 nm |
title | Temperature dependence of the thermo-optic coefficient in 4H-SiC and GaN slabs at the wavelength of 1550 nm |
title_full | Temperature dependence of the thermo-optic coefficient in 4H-SiC and GaN slabs at the wavelength of 1550 nm |
title_fullStr | Temperature dependence of the thermo-optic coefficient in 4H-SiC and GaN slabs at the wavelength of 1550 nm |
title_full_unstemmed | Temperature dependence of the thermo-optic coefficient in 4H-SiC and GaN slabs at the wavelength of 1550 nm |
title_short | Temperature dependence of the thermo-optic coefficient in 4H-SiC and GaN slabs at the wavelength of 1550 nm |
title_sort | temperature dependence of the thermo-optic coefficient in 4h-sic and gan slabs at the wavelength of 1550 nm |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8938550/ https://www.ncbi.nlm.nih.gov/pubmed/35314709 http://dx.doi.org/10.1038/s41598-022-08232-x |
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