Ambient Pressure Chemical Vapor Deposition of Flat and Vertically Aligned MoS(2) Nanosheets

Molybdenum disulfide (MoS(2)) got tremendous attention due to its atomically thin body, rich physics, and high carrier mobility. The controlled synthesis of large area and high crystalline monolayer MoS(2) nanosheets on diverse substrates remains a challenge for potential practical applications. Synthesizing different structured MoS(2) nanosheets with horizontal and vertical orientations with respect to the substrate surface would bring a configurational versatility with benefit for numerous applications, including nanoelectronics, optoelectronics, and energy technologies. Among the proposed methods, ambient pressure chemical vapor deposition (AP-CVD) is a promising way for developing large-scale MoS(2) nanosheets because of its high flexibility and facile approach. Here, we show an effective way for synthesizing large-scale horizontally and vertically aligned MoS(2) on different substrates such as flat SiO(2)/Si, pre-patterned SiO(2) and conductive substrates (TaN) benefit various direct TMDs production. In particular, we show precise control of CVD optimization for yielding high-quality MoS(2) layers by changing growth zone configuration and the process steps. We demonstrated that the influence of configuration variability by local changes of the S to MoO(3) precursor positions in the growth zones inside the CVD reactor is a key factor that results in differently oriented MoS(2) formation. Finally, we show the layer quality and physical properties of as-grown MoS(2) by means of different characterizations: Raman spectroscopy, scanning electron microscopy (SEM), photoluminescence (PL) and X-ray photoelectron spectroscopy (XPS). These experimental findings provide a strong pathway for conformally recasting AP-CVD grown MoS(2) in many different configurations (i.e., substrate variability) or motifs (i.e., vertical or planar alignment) with potential for flexible electronics, optoelectronics, memories to energy storage devices.