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Mechanism of Photocurrent Degradation and Contactless Healing in p-Type Mg-Doped Gallium Nitride Thin Films
Light-induced degradation (LID) phenomenon is commonly found in optoelectronics devices. Self-healing effect in halide lead perovskite solar cells was investigated since the electrons and holes in the shallow traps could escape easily at room temperature. However, the degradation in the semiconducto...
Autores principales: | , , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2022
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8950378/ https://www.ncbi.nlm.nih.gov/pubmed/35335712 http://dx.doi.org/10.3390/nano12060899 |
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author | Wu, Xiaoyan Li, Wei Chen, Qingrong Xu, Caixia Wang, Jiamian Wu, Lingyuan Liu, Guodong Wang, Weiping Li, Ting Chen, Ping Xu, Long |
author_facet | Wu, Xiaoyan Li, Wei Chen, Qingrong Xu, Caixia Wang, Jiamian Wu, Lingyuan Liu, Guodong Wang, Weiping Li, Ting Chen, Ping Xu, Long |
author_sort | Wu, Xiaoyan |
collection | PubMed |
description | Light-induced degradation (LID) phenomenon is commonly found in optoelectronics devices. Self-healing effect in halide lead perovskite solar cells was investigated since the electrons and holes in the shallow traps could escape easily at room temperature. However, the degradation in the semiconductors could not easily recover at room temperature, and many of them needed annealing at temperatures in the several hundreds, which was not friendly to the integrated optoelectronic semiconductor devices. To solve this problem, in this work, LID effect of photocurrent in p-type Mg-doped gallium nitride thin films was investigated, and deep defect and vacancy traps played a vital role in the LID and healing process. This work provides a contactless way to heal the photocurrent behavior to its initial level, which is desirable in integrated devices. |
format | Online Article Text |
id | pubmed-8950378 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2022 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-89503782022-03-26 Mechanism of Photocurrent Degradation and Contactless Healing in p-Type Mg-Doped Gallium Nitride Thin Films Wu, Xiaoyan Li, Wei Chen, Qingrong Xu, Caixia Wang, Jiamian Wu, Lingyuan Liu, Guodong Wang, Weiping Li, Ting Chen, Ping Xu, Long Nanomaterials (Basel) Article Light-induced degradation (LID) phenomenon is commonly found in optoelectronics devices. Self-healing effect in halide lead perovskite solar cells was investigated since the electrons and holes in the shallow traps could escape easily at room temperature. However, the degradation in the semiconductors could not easily recover at room temperature, and many of them needed annealing at temperatures in the several hundreds, which was not friendly to the integrated optoelectronic semiconductor devices. To solve this problem, in this work, LID effect of photocurrent in p-type Mg-doped gallium nitride thin films was investigated, and deep defect and vacancy traps played a vital role in the LID and healing process. This work provides a contactless way to heal the photocurrent behavior to its initial level, which is desirable in integrated devices. MDPI 2022-03-09 /pmc/articles/PMC8950378/ /pubmed/35335712 http://dx.doi.org/10.3390/nano12060899 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Wu, Xiaoyan Li, Wei Chen, Qingrong Xu, Caixia Wang, Jiamian Wu, Lingyuan Liu, Guodong Wang, Weiping Li, Ting Chen, Ping Xu, Long Mechanism of Photocurrent Degradation and Contactless Healing in p-Type Mg-Doped Gallium Nitride Thin Films |
title | Mechanism of Photocurrent Degradation and Contactless Healing in p-Type Mg-Doped Gallium Nitride Thin Films |
title_full | Mechanism of Photocurrent Degradation and Contactless Healing in p-Type Mg-Doped Gallium Nitride Thin Films |
title_fullStr | Mechanism of Photocurrent Degradation and Contactless Healing in p-Type Mg-Doped Gallium Nitride Thin Films |
title_full_unstemmed | Mechanism of Photocurrent Degradation and Contactless Healing in p-Type Mg-Doped Gallium Nitride Thin Films |
title_short | Mechanism of Photocurrent Degradation and Contactless Healing in p-Type Mg-Doped Gallium Nitride Thin Films |
title_sort | mechanism of photocurrent degradation and contactless healing in p-type mg-doped gallium nitride thin films |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8950378/ https://www.ncbi.nlm.nih.gov/pubmed/35335712 http://dx.doi.org/10.3390/nano12060899 |
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