The Effect of Heavy Fe-Doping on 3D Growth Mode and Fe Diffusion in GaN for High Power HEMT Application

The high electron mobility transistor (HEMT) structures on Si (111) substrates were fabricated with heavily Fe-doped GaN buffer layers by metalorganic chemical vapor deposition (MOCVD). The heavy Fe concentrations employed for the purpose of highly insulating buffer resulted in Fe segregation and 3D...

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Detalles Bibliográficos
Autores principales: Dai, Jin-Ji, Mai, Thi Thu, Nallasani, Umeshwar Reddy, Chang, Shao-Chien, Hsiao, Hsin-I, Wu, Ssu-Kuan, Liu, Cheng-Wei, Wen, Hua-Chiang, Chou, Wu-Ching, Wang, Chieh-Piao, Hoang, Luc Huy
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8955507/
https://www.ncbi.nlm.nih.gov/pubmed/35329508
http://dx.doi.org/10.3390/ma15062058

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8955507/
https://www.ncbi.nlm.nih.gov/pubmed/35329508
http://dx.doi.org/10.3390/ma15062058

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