Si-Doped HfO(2)-Based Ferroelectric Tunnel Junctions with a Composite Energy Barrier for Non-Volatile Memory Applications

Ferroelectric tunnel junctions (FTJs) have attracted attention as devices for advanced memory applications owing to their high operating speed, low operating energy, and excellent scalability. In particular, hafnia ferroelectric materials are very promising because of their high remanent polarizatio...

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Detalles Bibliográficos
Autores principales: Lee, Yoseop, Song, Sungmun, Ham, Woori, Ahn, Seung-Eon
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8956036/
https://www.ncbi.nlm.nih.gov/pubmed/35329702
http://dx.doi.org/10.3390/ma15062251

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8956036/
https://www.ncbi.nlm.nih.gov/pubmed/35329702
http://dx.doi.org/10.3390/ma15062251

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