Cargando…

Si-Doped HfO(2)-Based Ferroelectric Tunnel Junctions with a Composite Energy Barrier for Non-Volatile Memory Applications

Ferroelectric tunnel junctions (FTJs) have attracted attention as devices for advanced memory applications owing to their high operating speed, low operating energy, and excellent scalability. In particular, hafnia ferroelectric materials are very promising because of their high remanent polarizatio...

Descripción completa

Detalles Bibliográficos
Autores principales:	Lee, Yoseop, Song, Sungmun, Ham, Woori, Ahn, Seung-Eon
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2022
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8956036/ https://www.ncbi.nlm.nih.gov/pubmed/35329702 http://dx.doi.org/10.3390/ma15062251

Ejemplares similares

Integration of lead-free ferroelectric on HfO(2)/Si (100) for high performance non-volatile memory applications
por: Kundu, Souvik, et al.
Publicado: (2015)

The demonstration of significant ferroelectricity in epitaxial Y-doped HfO(2) film
por: Shimizu, Takao, et al.
Publicado: (2016)

Enhanced ferroelectric switching speed of Si-doped HfO(2) thin film tailored by oxygen deficiency
por: Lee, Kyoungjun, et al.
Publicado: (2021)

Impact of La Concentration on Ferroelectricity of La-Doped HfO(2) Epitaxial Thin Films
por: Song, Tingfeng, et al.
Publicado: (2021)

Graphene/Ferroelectric (Ge-Doped HfO(2)) Adaptable Transistors Acting as Reconfigurable Logic Gates
por: Dragoman, Mircea, et al.
Publicado: (2022)

Tunable Microwave Filters Using HfO(2)-Based Ferroelectrics
por: Aldrigo, Martino, et al.
Publicado: (2020)

Comprehensive Investigation of Constant Voltage Stress Time-Dependent Breakdown and Cycle-to-Breakdown Reliability in Y-Doped and Si-Doped HfO(2) Metal-Ferroelectric-Metal Memory
por: Chang, Ting-Yu, et al.
Publicado: (2023)

Effects of Charge Trapping on Memory Characteristics for HfO(2)-Based Ferroelectric Field Effect Transistors
por: Wang, Jianjian, et al.
Publicado: (2023)

Improved remnant polarization of Zr-doped HfO(2) ferroelectric film by CF(4)/O(2) plasma passivation
por: Choi, Yejoo, et al.
Publicado: (2022)

Study of Direct-Contact HfO(2)/Si Interfaces
por: Miyata, Noriyuki
Publicado: (2012)

Low-Frequency Noise Characteristics in HfO(2)-Based Metal-Ferroelectric-Metal Capacitors
por: Im, Ki-Sik, et al.
Publicado: (2022)

Humidity Sensing Properties of (In+Nb) Doped HfO(2) Ceramics
por: Yao, Jiahao, et al.
Publicado: (2023)

Synaptic Behaviors in Ferroelectric-Like Field-Effect Transistors with Ultrathin Amorphous HfO(2) Film
por: Peng, Yue, et al.
Publicado: (2022)

On the switching dynamics of epitaxial ferroelectric CeO(2)–HfO(2) thin film capacitors
por: Cüppers, Felix, et al.
Publicado: (2022)

Temperature- and Frequency-Dependent Ferroelectric Characteristics of Metal-Ferroelectric-Metal Capacitors with Atomic-Layer-Deposited Undoped HfO(2) Films
por: Jang, Chan-Hee, et al.
Publicado: (2022)

Effect of ion implantation energy for the synthesis of Ge nanocrystals in SiN films with HfO(2)/SiO(2 )stack tunnel dielectrics for memory application
por: Sahu, Bhabani Shankar, et al.
Publicado: (2011)

Giant tunnelling electroresistance in metal/ferroelectric/semiconductor tunnel junctions by engineering the Schottky barrier
por: Xi, Zhongnan, et al.
Publicado: (2017)

Enhanced non-volatile memory characteristics with quattro-layer graphene nanoplatelets vs. 2.85-nm Si nanoparticles with asymmetric Al(2)O(3)/HfO(2) tunnel oxide
por: El-Atab, Nazek, et al.
Publicado: (2015)

Functional ferroelectric tunnel junctions on silicon
por: Guo, Rui, et al.
Publicado: (2015)

Synaptic Characteristic of Hafnia-Based Ferroelectric Tunnel Junction Device for Neuromorphic Computing Application
por: Kho, Wonwoo, et al.
Publicado: (2022)

Resistive switching of the HfO(x)/HfO(2) bilayer heterostructure and its transmission characteristics as a synapse
por: Tan, Tingting, et al.
Publicado: (2018)

Temperature-Dependent HfO(2)/Si Interface Structural Evolution and its Mechanism
por: Zhang, Xiao-Ying, et al.
Publicado: (2019)

Mesoscopic-scale grain formation in HfO(2)-based ferroelectric thin films and its impact on electrical characteristics
por: Kobayashi, Masaharu, et al.
Publicado: (2022)

Synthesis of freestanding HfO(2 )nanostructures
por: Kidd, Timothy, et al.
Publicado: (2011)

Gadolinium oxide nanocrystal nonvolatile memory with HfO(2)/Al(2)O(3 )nanostructure tunneling layers
por: Wang, Jer-Chyi, et al.
Publicado: (2012)

A Multi-level Memristor Based on Al-Doped HfO(2) Thin Film
por: Wu, Lei, et al.
Publicado: (2019)

Encoding, training and retrieval in ferroelectric tunnel junctions
por: Xu, Hanni, et al.
Publicado: (2016)

Enhancement of Resistive Switching Performance in Hafnium Oxide (HfO(2)) Devices via Sol-Gel Method Stacking Tri-Layer HfO(2)/Al-ZnO/HfO(2) Structures
por: Xu, Yuan-Dong, et al.
Publicado: (2022)

Ferroelectric Tunneling Junctions Based on Aluminum Oxide/ Zirconium-Doped Hafnium Oxide for Neuromorphic Computing
por: Ryu, Hojoon, et al.
Publicado: (2019)

Spike Optimization to Improve Properties of Ferroelectric Tunnel Junction Synaptic Devices for Neuromorphic Computing System Applications
por: Byun, Jisu, et al.
Publicado: (2023)

Ferroelectric Electroresistance after a Breakdown in Epitaxial Hf(0.5)Zr(0.5)O(2) Tunnel Junctions
por: Long, Xiao, et al.
Publicado: (2023)

Trade-off between Gradual Set and On/Off Ratio in HfO(x)-Based Analog Memory with a Thin SiO(x) Barrier Layer
por: Athena, Fabia F., et al.
Publicado: (2023)

Nanocrystallized Ge-Rich SiGe-HfO(2) Highly Photosensitive in Short-Wave Infrared
por: Palade, Catalin, et al.
Publicado: (2021)

High-Performance Graphene Nanowalls/Si Self-Powered Photodetectors with HfO(2) as an Interfacial Layer
por: Shen, Yuheng, et al.
Publicado: (2023)

Enhancing Photoluminescence Intensity and Spectral Bandwidth of Hybrid Nanofiber/Thin-Film Multilayer Tm(3+)-Doped SiO(2)–HfO(2)
por: Zulfikri, Nurul Izzati Zafirah, et al.
Publicado: (2022)

Sub-nanosecond memristor based on ferroelectric tunnel junction
por: Ma, Chao, et al.
Publicado: (2020)

Atomic-scale fatigue mechanism of ferroelectric tunnel junctions
por: Yang, Yihao, et al.
Publicado: (2021)

Insights into Electron Transport in a Ferroelectric Tunnel Junction
por: Sandu, Titus, et al.
Publicado: (2022)

Reversible transition between the polar and antipolar phases and its implications for wake-up and fatigue in HfO(2)-based ferroelectric thin film
por: Cheng, Yan, et al.
Publicado: (2022)

Thickness scaling of atomic-layer-deposited HfO(2) films and their application to wafer-scale graphene tunnelling transistors
por: Jeong, Seong-Jun, et al.
Publicado: (2016)

Cannot write session to /tmp/vufind_sessions/sess_sotq6k00aha3smhvcvjt9tlpp6