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Enhanced photonics devices based on low temperature plasma-deposited dichlorosilane-based ultra-silicon-rich nitride (Si(8)N)
Ultra-silicon-rich nitride with refractive indices ~ 3 possesses high nonlinear refractive index—100× higher than stoichiometric silicon nitride and presents absence of two-photon absorption, making it attractive to be used in nonlinear integrated optics at telecommunications wavelengths. Despite it...
| Autores principales: | , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8960789/ https://www.ncbi.nlm.nih.gov/pubmed/35347190 http://dx.doi.org/10.1038/s41598-022-09227-4 |