Current-induced Néel order switching facilitated by magnetic phase transition

Terahertz (THz) spin dynamics and vanishing stray field make antiferromagnetic (AFM) materials the most promising candidate for the next-generation magnetic memory technology with revolutionary storage density and writing speed. However, owing to the extremely large exchange energy barriers, energy-...

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Detalles Bibliográficos
Autores principales: Wu, Hao, Zhang, Hantao, Wang, Baomin, Groß, Felix, Yang, Chao-Yao, Li, Gengfei, Guo, Chenyang, He, Haoran, Wong, Kin, Wu, Di, Han, Xiufeng, Lai, Chih-Huang, Gräfe, Joachim, Cheng, Ran, Wang, Kang L.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8960908/
https://www.ncbi.nlm.nih.gov/pubmed/35347132
http://dx.doi.org/10.1038/s41467-022-29170-2

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