Perovskite-Compatible Electron-Beam-Lithography Process Based on Nonpolar Solvents for Single-Nanowire Devices

[Image: see text] Metal halide perovskites (MHPs) have been studied intensely as the active material for optoelectronic devices. Lithography methods for perovskites remain limited because of the solubility of perovskites in polar solvents. Here, we demonstrate an electron-beam-lithography process wi...

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Autores principales: Lamers, Nils, Zhang, Zhaojun, Wallentin, Jesper
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2022
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8961732/
https://www.ncbi.nlm.nih.gov/pubmed/35372798
http://dx.doi.org/10.1021/acsanm.2c00188
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author Lamers, Nils
Zhang, Zhaojun
Wallentin, Jesper
author_facet Lamers, Nils
Zhang, Zhaojun
Wallentin, Jesper
author_sort Lamers, Nils
collection PubMed
description [Image: see text] Metal halide perovskites (MHPs) have been studied intensely as the active material for optoelectronic devices. Lithography methods for perovskites remain limited because of the solubility of perovskites in polar solvents. Here, we demonstrate an electron-beam-lithography process with a poly(methyl methacrylate) resist based on the nonpolar solvents o-xylene, hexane, and toluene. Features down to 50 nm size are created, and photoluminescence of CsPbBr(3) nanowires exhibits no degradation. We fabricate metal contacts to single CsPbBr(3) nanowires, which show a strong photoresponsivity of 0.29 A W(–1). The presented method is an excellent tool for nanoscale MHP science and technology, allowing for the fabrication of complex nanostructures.
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spelling pubmed-89617322022-03-30 Perovskite-Compatible Electron-Beam-Lithography Process Based on Nonpolar Solvents for Single-Nanowire Devices Lamers, Nils Zhang, Zhaojun Wallentin, Jesper ACS Appl Nano Mater [Image: see text] Metal halide perovskites (MHPs) have been studied intensely as the active material for optoelectronic devices. Lithography methods for perovskites remain limited because of the solubility of perovskites in polar solvents. Here, we demonstrate an electron-beam-lithography process with a poly(methyl methacrylate) resist based on the nonpolar solvents o-xylene, hexane, and toluene. Features down to 50 nm size are created, and photoluminescence of CsPbBr(3) nanowires exhibits no degradation. We fabricate metal contacts to single CsPbBr(3) nanowires, which show a strong photoresponsivity of 0.29 A W(–1). The presented method is an excellent tool for nanoscale MHP science and technology, allowing for the fabrication of complex nanostructures. American Chemical Society 2022-02-22 2022-03-25 /pmc/articles/PMC8961732/ /pubmed/35372798 http://dx.doi.org/10.1021/acsanm.2c00188 Text en © 2022 The Authors. Published by American Chemical Society https://creativecommons.org/licenses/by/4.0/Permits the broadest form of re-use including for commercial purposes, provided that author attribution and integrity are maintained (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Lamers, Nils
Zhang, Zhaojun
Wallentin, Jesper
Perovskite-Compatible Electron-Beam-Lithography Process Based on Nonpolar Solvents for Single-Nanowire Devices
title Perovskite-Compatible Electron-Beam-Lithography Process Based on Nonpolar Solvents for Single-Nanowire Devices
title_full Perovskite-Compatible Electron-Beam-Lithography Process Based on Nonpolar Solvents for Single-Nanowire Devices
title_fullStr Perovskite-Compatible Electron-Beam-Lithography Process Based on Nonpolar Solvents for Single-Nanowire Devices
title_full_unstemmed Perovskite-Compatible Electron-Beam-Lithography Process Based on Nonpolar Solvents for Single-Nanowire Devices
title_short Perovskite-Compatible Electron-Beam-Lithography Process Based on Nonpolar Solvents for Single-Nanowire Devices
title_sort perovskite-compatible electron-beam-lithography process based on nonpolar solvents for single-nanowire devices
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8961732/
https://www.ncbi.nlm.nih.gov/pubmed/35372798
http://dx.doi.org/10.1021/acsanm.2c00188
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