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Developing molecular-level models for organic field-effect transistors

Organic field-effect transistors (OFETs) are not only functional devices but also represent an important tool for measuring the charge-transport properties of organic semiconductors (OSs). Thus, efforts to understand the performance and characteristics of OFET devices are not only useful in helping...

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Autores principales: Li, Haoyuan, Brédas, Jean-Luc
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Oxford University Press 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8966973/
https://www.ncbi.nlm.nih.gov/pubmed/35371512
http://dx.doi.org/10.1093/nsr/nwaa167
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author Li, Haoyuan
Brédas, Jean-Luc
author_facet Li, Haoyuan
Brédas, Jean-Luc
author_sort Li, Haoyuan
collection PubMed
description Organic field-effect transistors (OFETs) are not only functional devices but also represent an important tool for measuring the charge-transport properties of organic semiconductors (OSs). Thus, efforts to understand the performance and characteristics of OFET devices are not only useful in helping achieve higher device efficiencies but also critical to ensuring accuracy in the evaluations of OS charge mobilities. These studies rely on OFET device models, which connect the measured current characteristics to the properties of the OSs. Developing such OFET models requires good knowledge of the charge-transport processes in OSs. In device active layers, the OS thin films are either amorphous (e.g. in organic light-emitting diodes and organic solar cells) or crystalline (e.g. those optimized for charge transport in OFETs). When the electronic couplings between adjacent OS molecules or polymer chain segments are weak, the charge-transport mechanism is dominated by hopping processes, which is the context in which we frame the discussion in this Review. Factors such as disorder, mobility anisotropy, traps, grain boundaries or film morphology all impact charge transport. To take these features fully into account in an OFET device model requires considering a nano-scale, molecular-level resolution. Here, we discuss the recent development of such molecular-resolution OFET models based on a kinetic Monte Carlo approach relevant to the hopping regime. We also briefly describe the applicability of these models to high-mobility OFETs, where we underline the need to extend them to incorporate aspects related to charge delocalization.
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spelling pubmed-89669732022-03-31 Developing molecular-level models for organic field-effect transistors Li, Haoyuan Brédas, Jean-Luc Natl Sci Rev Materials Science Organic field-effect transistors (OFETs) are not only functional devices but also represent an important tool for measuring the charge-transport properties of organic semiconductors (OSs). Thus, efforts to understand the performance and characteristics of OFET devices are not only useful in helping achieve higher device efficiencies but also critical to ensuring accuracy in the evaluations of OS charge mobilities. These studies rely on OFET device models, which connect the measured current characteristics to the properties of the OSs. Developing such OFET models requires good knowledge of the charge-transport processes in OSs. In device active layers, the OS thin films are either amorphous (e.g. in organic light-emitting diodes and organic solar cells) or crystalline (e.g. those optimized for charge transport in OFETs). When the electronic couplings between adjacent OS molecules or polymer chain segments are weak, the charge-transport mechanism is dominated by hopping processes, which is the context in which we frame the discussion in this Review. Factors such as disorder, mobility anisotropy, traps, grain boundaries or film morphology all impact charge transport. To take these features fully into account in an OFET device model requires considering a nano-scale, molecular-level resolution. Here, we discuss the recent development of such molecular-resolution OFET models based on a kinetic Monte Carlo approach relevant to the hopping regime. We also briefly describe the applicability of these models to high-mobility OFETs, where we underline the need to extend them to incorporate aspects related to charge delocalization. Oxford University Press 2020-07-18 /pmc/articles/PMC8966973/ /pubmed/35371512 http://dx.doi.org/10.1093/nsr/nwaa167 Text en © The Author(s) 2020. Published by Oxford University Press on behalf of China Science Publishing & Media Ltd. https://creativecommons.org/licenses/by/4.0/This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) ), which permits unrestricted reuse, distribution, and reproduction in any medium, provided the original work is properly cited.
spellingShingle Materials Science
Li, Haoyuan
Brédas, Jean-Luc
Developing molecular-level models for organic field-effect transistors
title Developing molecular-level models for organic field-effect transistors
title_full Developing molecular-level models for organic field-effect transistors
title_fullStr Developing molecular-level models for organic field-effect transistors
title_full_unstemmed Developing molecular-level models for organic field-effect transistors
title_short Developing molecular-level models for organic field-effect transistors
title_sort developing molecular-level models for organic field-effect transistors
topic Materials Science
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8966973/
https://www.ncbi.nlm.nih.gov/pubmed/35371512
http://dx.doi.org/10.1093/nsr/nwaa167
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