Cargando…

Sparse CNT networks with implanted AgAu nanoparticles: A novel memristor with short-term memory bordering between diffusive and bipolar switching

With this work we introduce a novel memristor in a lateral geometry whose resistive switching behaviour unifies the capabilities of bipolar switching with decelerated diffusive switching showing a biologically plausible short-term memory. A new fabrication route is presented for achieving lateral na...

Descripción completa

Detalles Bibliográficos
Autores principales: Terasa, Maik-Ivo, Holtz, Pia, Carstens, Niko, Kaps, Sören, Faupel, Franz, Vahl, Alexander, Adelung, Rainer
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Public Library of Science 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8970472/
https://www.ncbi.nlm.nih.gov/pubmed/35358187
http://dx.doi.org/10.1371/journal.pone.0264846
_version_ 1784679463313735680
author Terasa, Maik-Ivo
Holtz, Pia
Carstens, Niko
Kaps, Sören
Faupel, Franz
Vahl, Alexander
Adelung, Rainer
author_facet Terasa, Maik-Ivo
Holtz, Pia
Carstens, Niko
Kaps, Sören
Faupel, Franz
Vahl, Alexander
Adelung, Rainer
author_sort Terasa, Maik-Ivo
collection PubMed
description With this work we introduce a novel memristor in a lateral geometry whose resistive switching behaviour unifies the capabilities of bipolar switching with decelerated diffusive switching showing a biologically plausible short-term memory. A new fabrication route is presented for achieving lateral nano-scaled distances by depositing a sparse network of carbon nanotubes (CNTs) via spin-coating of a custom-made CNT dispersion. Electrochemical metallization-type (ECM) resistive switching is obtained by implanting AgAu nanoparticles with a Haberland-type gas aggregation cluster source into the nanogaps between the CNTs and shows a hybrid behaviour of both diffusive and bipolar switching. The resistance state resets to a high resistive state (HRS) either if the voltage is removed with a retention time in the second- to sub-minute scale (diffusive) or by applying a reverse voltage (bipolar). Furthermore, the retention time is positively correlated to the duration of the Set voltage pulse. The potential for low-voltage operation makes this approach a promising candidate for short-term memory applications in neuromorphic circuits. In addition, the lateral fabrication approach opens the pathway towards integrating sensor-functionality and offers a general starting point for the scalable fabrication of nanoscaled devices.
format Online
Article
Text
id pubmed-8970472
institution National Center for Biotechnology Information
language English
publishDate 2022
publisher Public Library of Science
record_format MEDLINE/PubMed
spelling pubmed-89704722022-04-01 Sparse CNT networks with implanted AgAu nanoparticles: A novel memristor with short-term memory bordering between diffusive and bipolar switching Terasa, Maik-Ivo Holtz, Pia Carstens, Niko Kaps, Sören Faupel, Franz Vahl, Alexander Adelung, Rainer PLoS One Research Article With this work we introduce a novel memristor in a lateral geometry whose resistive switching behaviour unifies the capabilities of bipolar switching with decelerated diffusive switching showing a biologically plausible short-term memory. A new fabrication route is presented for achieving lateral nano-scaled distances by depositing a sparse network of carbon nanotubes (CNTs) via spin-coating of a custom-made CNT dispersion. Electrochemical metallization-type (ECM) resistive switching is obtained by implanting AgAu nanoparticles with a Haberland-type gas aggregation cluster source into the nanogaps between the CNTs and shows a hybrid behaviour of both diffusive and bipolar switching. The resistance state resets to a high resistive state (HRS) either if the voltage is removed with a retention time in the second- to sub-minute scale (diffusive) or by applying a reverse voltage (bipolar). Furthermore, the retention time is positively correlated to the duration of the Set voltage pulse. The potential for low-voltage operation makes this approach a promising candidate for short-term memory applications in neuromorphic circuits. In addition, the lateral fabrication approach opens the pathway towards integrating sensor-functionality and offers a general starting point for the scalable fabrication of nanoscaled devices. Public Library of Science 2022-03-31 /pmc/articles/PMC8970472/ /pubmed/35358187 http://dx.doi.org/10.1371/journal.pone.0264846 Text en © 2022 Terasa et al https://creativecommons.org/licenses/by/4.0/This is an open access article distributed under the terms of the Creative Commons Attribution License (https://creativecommons.org/licenses/by/4.0/) , which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.
spellingShingle Research Article
Terasa, Maik-Ivo
Holtz, Pia
Carstens, Niko
Kaps, Sören
Faupel, Franz
Vahl, Alexander
Adelung, Rainer
Sparse CNT networks with implanted AgAu nanoparticles: A novel memristor with short-term memory bordering between diffusive and bipolar switching
title Sparse CNT networks with implanted AgAu nanoparticles: A novel memristor with short-term memory bordering between diffusive and bipolar switching
title_full Sparse CNT networks with implanted AgAu nanoparticles: A novel memristor with short-term memory bordering between diffusive and bipolar switching
title_fullStr Sparse CNT networks with implanted AgAu nanoparticles: A novel memristor with short-term memory bordering between diffusive and bipolar switching
title_full_unstemmed Sparse CNT networks with implanted AgAu nanoparticles: A novel memristor with short-term memory bordering between diffusive and bipolar switching
title_short Sparse CNT networks with implanted AgAu nanoparticles: A novel memristor with short-term memory bordering between diffusive and bipolar switching
title_sort sparse cnt networks with implanted agau nanoparticles: a novel memristor with short-term memory bordering between diffusive and bipolar switching
topic Research Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8970472/
https://www.ncbi.nlm.nih.gov/pubmed/35358187
http://dx.doi.org/10.1371/journal.pone.0264846
work_keys_str_mv AT terasamaikivo sparsecntnetworkswithimplantedagaunanoparticlesanovelmemristorwithshorttermmemoryborderingbetweendiffusiveandbipolarswitching
AT holtzpia sparsecntnetworkswithimplantedagaunanoparticlesanovelmemristorwithshorttermmemoryborderingbetweendiffusiveandbipolarswitching
AT carstensniko sparsecntnetworkswithimplantedagaunanoparticlesanovelmemristorwithshorttermmemoryborderingbetweendiffusiveandbipolarswitching
AT kapssoren sparsecntnetworkswithimplantedagaunanoparticlesanovelmemristorwithshorttermmemoryborderingbetweendiffusiveandbipolarswitching
AT faupelfranz sparsecntnetworkswithimplantedagaunanoparticlesanovelmemristorwithshorttermmemoryborderingbetweendiffusiveandbipolarswitching
AT vahlalexander sparsecntnetworkswithimplantedagaunanoparticlesanovelmemristorwithshorttermmemoryborderingbetweendiffusiveandbipolarswitching
AT adelungrainer sparsecntnetworkswithimplantedagaunanoparticlesanovelmemristorwithshorttermmemoryborderingbetweendiffusiveandbipolarswitching