High-Performance Photodetectors Based on MoTe(2)–MoS(2) van der Waals Heterostructures

[Image: see text] Two-dimensional (2D) materials have got extensive attention for multifunctional device applications in advanced nanoelectronics and optoelectronics, such as field-effect transistors, photodiodes, and solar cells. In our work, we fabricated MoTe(2)–MoS(2) van der Waals heterostructure photodetectors with great performance using the mechanical exfoliation method and restack technique. It is demonstrated that our MoTe(2)–MoS(2) heterostructure photodetector device can operate without bias voltage, possessing a low dark current (10 pA) and high photocurrent on/off ratio (>10(4)). Importantly, the room temperature photoresponsivity of the MoTe(2)–MoS(2) photodetector can reach 110.6 and 9.2 mA W(–1) under λ = 532 and 1064 nm incident laser powers, respectively. Our results indicate that the van der Waals heterostructure based on 2D semiconducting materials is expected to play an important role in nanoscale optoelectronic applications.