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High-performance hysteresis-free perovskite transistors through anion engineering

Despite the impressive development of metal halide perovskites in diverse optoelectronics, progress on high-performance transistors employing state-of-the-art perovskite channels has been limited due to ion migration and large organic spacer isolation. Herein, we report high-performance hysteresis-f...

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Detalles Bibliográficos
Autores principales: Zhu, Huihui, Liu, Ao, Shim, Kyu In, Jung, Haksoon, Zou, Taoyu, Reo, Youjin, Kim, Hyunjun, Han, Jeong Woo, Chen, Yimu, Chu, Hye Yong, Lim, Jun Hyung, Kim, Hyung-Jun, Bai, Sai, Noh, Yong-Young
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8975846/
https://www.ncbi.nlm.nih.gov/pubmed/35365628
http://dx.doi.org/10.1038/s41467-022-29434-x
Descripción
Sumario:Despite the impressive development of metal halide perovskites in diverse optoelectronics, progress on high-performance transistors employing state-of-the-art perovskite channels has been limited due to ion migration and large organic spacer isolation. Herein, we report high-performance hysteresis-free p-channel perovskite thin-film transistors (TFTs) based on methylammonium tin iodide (MASnI(3)) and rationalise the effects of halide (I/Br/Cl) anion engineering on film quality improvement and tin/iodine vacancy suppression, realising high hole mobilities of 20 cm(2) V(−1) s(−1), current on/off ratios exceeding 10(7), and threshold voltages of 0 V along with high operational stabilities and reproducibilities. We reveal ion migration has a negligible contribution to the hysteresis of Sn-based perovskite TFTs; instead, minority carrier trapping is the primary cause. Finally, we integrate the perovskite TFTs with commercialised n-channel indium gallium zinc oxide TFTs on a single chip to construct high-gain complementary inverters, facilitating the development of halide perovskite semiconductors for printable electronics and circuits.