Bridging the gap between atomically thin semiconductors and metal leads

Electrically interfacing atomically thin transition metal dichalcogenide semiconductors (TMDSCs) with metal leads is challenging because of undesired interface barriers, which have drastically constrained the electrical performance of TMDSC devices for exploring their unconventional physical propert...

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Detalles Bibliográficos
Autores principales: Cai, Xiangbin, Wu, Zefei, Han, Xu, Chen, Yong, Xu, Shuigang, Lin, Jiangxiazi, Han, Tianyi, He, Pingge, Feng, Xuemeng, An, Liheng, Shi, Run, Wang, Jingwei, Ying, Zhehan, Cai, Yuan, Hua, Mengyuan, Liu, Junwei, Pan, Ding, Cheng, Chun, Wang, Ning
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8976069/
https://www.ncbi.nlm.nih.gov/pubmed/35365627
http://dx.doi.org/10.1038/s41467-022-29449-4

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8976069/
https://www.ncbi.nlm.nih.gov/pubmed/35365627
http://dx.doi.org/10.1038/s41467-022-29449-4

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