Pressure-induced coupled structural–electronic transition in SnS(2) under different hydrostatic environments up to 39.7 GPa
A series of in situ high-pressure Raman spectroscopy and electrical conductivity experiments have been performed to investigate the vibrational and electrical transport properties of SnS(2) under non-hydrostatic and hydrostatic environments. Upon compression, an coupled structural–electronic transit...
Autores principales: | , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
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The Royal Society of Chemistry
2022
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8979095/ https://www.ncbi.nlm.nih.gov/pubmed/35425242 http://dx.doi.org/10.1039/d1ra08632d |
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author | Zhang, Xinyu Dai, Lidong Hu, Haiying Hong, Meiling Li, Chuang |
author_facet | Zhang, Xinyu Dai, Lidong Hu, Haiying Hong, Meiling Li, Chuang |
author_sort | Zhang, Xinyu |
collection | PubMed |
description | A series of in situ high-pressure Raman spectroscopy and electrical conductivity experiments have been performed to investigate the vibrational and electrical transport properties of SnS(2) under non-hydrostatic and hydrostatic environments. Upon compression, an coupled structural–electronic transition in SnS(2) occurred at 30.2 GPa under non-hydrostatic conditions, which was evidenced by the splitting of the E(g) mode and the discontinuities in Raman shifts, Raman full width at half maximum (FWHM) and electrical conductivity. However, the coupled structural–electronic transition took place at a higher pressure of 33.4 GPa under hydrostatic conditions, which may be due to the influence of the pressure medium. Furthermore, our first-principles theoretical calculations results revealed that the bandgap energy of SnS(2) decreased slowly with increasing pressure and it closed in the pressure range of 30–40 GPa, which agreed well with our Raman spectroscopy and electrical conductivity results. Upon decompression, the recoverable Raman peaks and electrical conductivity indicated that the coupled structural–electronic transition was reversible, which was further confirmed by our HRTEM observations. |
format | Online Article Text |
id | pubmed-8979095 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2022 |
publisher | The Royal Society of Chemistry |
record_format | MEDLINE/PubMed |
spelling | pubmed-89790952022-04-13 Pressure-induced coupled structural–electronic transition in SnS(2) under different hydrostatic environments up to 39.7 GPa Zhang, Xinyu Dai, Lidong Hu, Haiying Hong, Meiling Li, Chuang RSC Adv Chemistry A series of in situ high-pressure Raman spectroscopy and electrical conductivity experiments have been performed to investigate the vibrational and electrical transport properties of SnS(2) under non-hydrostatic and hydrostatic environments. Upon compression, an coupled structural–electronic transition in SnS(2) occurred at 30.2 GPa under non-hydrostatic conditions, which was evidenced by the splitting of the E(g) mode and the discontinuities in Raman shifts, Raman full width at half maximum (FWHM) and electrical conductivity. However, the coupled structural–electronic transition took place at a higher pressure of 33.4 GPa under hydrostatic conditions, which may be due to the influence of the pressure medium. Furthermore, our first-principles theoretical calculations results revealed that the bandgap energy of SnS(2) decreased slowly with increasing pressure and it closed in the pressure range of 30–40 GPa, which agreed well with our Raman spectroscopy and electrical conductivity results. Upon decompression, the recoverable Raman peaks and electrical conductivity indicated that the coupled structural–electronic transition was reversible, which was further confirmed by our HRTEM observations. The Royal Society of Chemistry 2022-01-18 /pmc/articles/PMC8979095/ /pubmed/35425242 http://dx.doi.org/10.1039/d1ra08632d Text en This journal is © The Royal Society of Chemistry https://creativecommons.org/licenses/by-nc/3.0/ |
spellingShingle | Chemistry Zhang, Xinyu Dai, Lidong Hu, Haiying Hong, Meiling Li, Chuang Pressure-induced coupled structural–electronic transition in SnS(2) under different hydrostatic environments up to 39.7 GPa |
title | Pressure-induced coupled structural–electronic transition in SnS(2) under different hydrostatic environments up to 39.7 GPa |
title_full | Pressure-induced coupled structural–electronic transition in SnS(2) under different hydrostatic environments up to 39.7 GPa |
title_fullStr | Pressure-induced coupled structural–electronic transition in SnS(2) under different hydrostatic environments up to 39.7 GPa |
title_full_unstemmed | Pressure-induced coupled structural–electronic transition in SnS(2) under different hydrostatic environments up to 39.7 GPa |
title_short | Pressure-induced coupled structural–electronic transition in SnS(2) under different hydrostatic environments up to 39.7 GPa |
title_sort | pressure-induced coupled structural–electronic transition in sns(2) under different hydrostatic environments up to 39.7 gpa |
topic | Chemistry |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8979095/ https://www.ncbi.nlm.nih.gov/pubmed/35425242 http://dx.doi.org/10.1039/d1ra08632d |
work_keys_str_mv | AT zhangxinyu pressureinducedcoupledstructuralelectronictransitioninsns2underdifferenthydrostaticenvironmentsupto397gpa AT dailidong pressureinducedcoupledstructuralelectronictransitioninsns2underdifferenthydrostaticenvironmentsupto397gpa AT huhaiying pressureinducedcoupledstructuralelectronictransitioninsns2underdifferenthydrostaticenvironmentsupto397gpa AT hongmeiling pressureinducedcoupledstructuralelectronictransitioninsns2underdifferenthydrostaticenvironmentsupto397gpa AT lichuang pressureinducedcoupledstructuralelectronictransitioninsns2underdifferenthydrostaticenvironmentsupto397gpa |