Pressure-induced coupled structural–electronic transition in SnS(2) under different hydrostatic environments up to 39.7 GPa

A series of in situ high-pressure Raman spectroscopy and electrical conductivity experiments have been performed to investigate the vibrational and electrical transport properties of SnS(2) under non-hydrostatic and hydrostatic environments. Upon compression, an coupled structural–electronic transit...

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Autores principales: Zhang, Xinyu, Dai, Lidong, Hu, Haiying, Hong, Meiling, Li, Chuang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8979095/
https://www.ncbi.nlm.nih.gov/pubmed/35425242
http://dx.doi.org/10.1039/d1ra08632d
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author Zhang, Xinyu
Dai, Lidong
Hu, Haiying
Hong, Meiling
Li, Chuang
author_facet Zhang, Xinyu
Dai, Lidong
Hu, Haiying
Hong, Meiling
Li, Chuang
author_sort Zhang, Xinyu
collection PubMed
description A series of in situ high-pressure Raman spectroscopy and electrical conductivity experiments have been performed to investigate the vibrational and electrical transport properties of SnS(2) under non-hydrostatic and hydrostatic environments. Upon compression, an coupled structural–electronic transition in SnS(2) occurred at 30.2 GPa under non-hydrostatic conditions, which was evidenced by the splitting of the E(g) mode and the discontinuities in Raman shifts, Raman full width at half maximum (FWHM) and electrical conductivity. However, the coupled structural–electronic transition took place at a higher pressure of 33.4 GPa under hydrostatic conditions, which may be due to the influence of the pressure medium. Furthermore, our first-principles theoretical calculations results revealed that the bandgap energy of SnS(2) decreased slowly with increasing pressure and it closed in the pressure range of 30–40 GPa, which agreed well with our Raman spectroscopy and electrical conductivity results. Upon decompression, the recoverable Raman peaks and electrical conductivity indicated that the coupled structural–electronic transition was reversible, which was further confirmed by our HRTEM observations.
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spelling pubmed-89790952022-04-13 Pressure-induced coupled structural–electronic transition in SnS(2) under different hydrostatic environments up to 39.7 GPa Zhang, Xinyu Dai, Lidong Hu, Haiying Hong, Meiling Li, Chuang RSC Adv Chemistry A series of in situ high-pressure Raman spectroscopy and electrical conductivity experiments have been performed to investigate the vibrational and electrical transport properties of SnS(2) under non-hydrostatic and hydrostatic environments. Upon compression, an coupled structural–electronic transition in SnS(2) occurred at 30.2 GPa under non-hydrostatic conditions, which was evidenced by the splitting of the E(g) mode and the discontinuities in Raman shifts, Raman full width at half maximum (FWHM) and electrical conductivity. However, the coupled structural–electronic transition took place at a higher pressure of 33.4 GPa under hydrostatic conditions, which may be due to the influence of the pressure medium. Furthermore, our first-principles theoretical calculations results revealed that the bandgap energy of SnS(2) decreased slowly with increasing pressure and it closed in the pressure range of 30–40 GPa, which agreed well with our Raman spectroscopy and electrical conductivity results. Upon decompression, the recoverable Raman peaks and electrical conductivity indicated that the coupled structural–electronic transition was reversible, which was further confirmed by our HRTEM observations. The Royal Society of Chemistry 2022-01-18 /pmc/articles/PMC8979095/ /pubmed/35425242 http://dx.doi.org/10.1039/d1ra08632d Text en This journal is © The Royal Society of Chemistry https://creativecommons.org/licenses/by-nc/3.0/
spellingShingle Chemistry
Zhang, Xinyu
Dai, Lidong
Hu, Haiying
Hong, Meiling
Li, Chuang
Pressure-induced coupled structural–electronic transition in SnS(2) under different hydrostatic environments up to 39.7 GPa
title Pressure-induced coupled structural–electronic transition in SnS(2) under different hydrostatic environments up to 39.7 GPa
title_full Pressure-induced coupled structural–electronic transition in SnS(2) under different hydrostatic environments up to 39.7 GPa
title_fullStr Pressure-induced coupled structural–electronic transition in SnS(2) under different hydrostatic environments up to 39.7 GPa
title_full_unstemmed Pressure-induced coupled structural–electronic transition in SnS(2) under different hydrostatic environments up to 39.7 GPa
title_short Pressure-induced coupled structural–electronic transition in SnS(2) under different hydrostatic environments up to 39.7 GPa
title_sort pressure-induced coupled structural–electronic transition in sns(2) under different hydrostatic environments up to 39.7 gpa
topic Chemistry
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8979095/
https://www.ncbi.nlm.nih.gov/pubmed/35425242
http://dx.doi.org/10.1039/d1ra08632d
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