The impact of fluence dependent proton ion irradiation on the structural and optical properties of Bi(5)In(30)Se(65) thin films for nonlinear optical devices

This paper reports the effects of ion irradiation on the structural, linear, and nonlinear optical properties of thermally evaporated Bi(5)In(30)Se(65) thin films. The prepared films were irradiated with 30 keV proton ions with different fluences, such as 5 × 10(15) ions per cm(2), 1 × 10(16) ions per cm(2), and 5 × 10(16) ions per cm(2). Structural analysis via X-ray diffraction (XRD) confirmed the non-crystalline nature of the film after ion irradiation with different doses. However, after the irradiation dose, the surface morphology changed, as shown by atomic force microscopy (AFM) images and field emission scanning electron microscopy (FESEM) images. The compositions of the films were obtained using energy-dispersive X-ray spectroscopy (EDX). Optical analysis via UV-Visible spectroscopy showed a reduction in the transmittance and an increase in the absorption in the higher wavelength region with irradiation. The optical bandgap and Tauc parameter decreased with an increase in the irradiation fluence, which is due to an increase in the irradiation-induced defects and disorder inside the system. The increases in the third order nonlinear susceptibility and the nonlinear refractive index with ion fluence are useful for nonlinear optical applications. The linear refractive index calculated from the transmittance data increased, satisfying Moss's rule. The optical parameters, such as lattice dielectric constant, optical density, skin depth, optical conductivity, real and imaginary dielectric constants, optical conductivity, loss factor, VELF, and SELF, were calculated using several empirical relationships and showed increasing behavior with the ion irradiation dose. The changes obtained in both the linear and nonlinear parameters will be useful for nonlinear optical device applications.