Chemical vapor deposition merges MoS(2) grains into high-quality and centimeter-scale films on Si/SiO(2)

Two-dimensional molybdenum disulfide (MoS(2)) has attracted increasing attention due to its promise for next-generation electronics. To realize MoS(2)-based electronics, however, a synthesis method is required that produces a uniform single-layer material and that is compatible with existing semiconductor fabrication techniques. Here, we demonstrate that uniform films of single-layer MoS(2) can be directly produced on Si/SiO(2) at wafer-scale without the use of catalysts or promoters. Control of the precursor transport through oxygen dosing yielded complete coverage and increased connectivity between crystalline MoS(2) domains. Spectroscopic characterization and carrier transport measurements furthermore revealed a reduced density of defects compared to conventional chemical vapor deposition growth that increased the quantum yield over ten-fold. To demonstrate the impact of enhanced scale and optoelectronic performance, centimeter-scale arrays of MoS(2) photosensors were produced that demonstrate unprecedentedly high and uniform responsivity. Our approach improves the prospect of MoS(2) for future applications.