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Non-invasive digital etching of van der Waals semiconductors

The capability to finely tailor material thickness with simultaneous atomic precision and non-invasivity would be useful for constructing quantum platforms and post-Moore microelectronics. However, it remains challenging to attain synchronized controls over tailoring selectivity and precision. Here...

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Autores principales: Zhou, Jian, Zhang, Chunchen, Shi, Li, Chen, Xiaoqing, Kim, Tae Soo, Gyeon, Minseung, Chen, Jian, Wang, Jinlan, Yu, Linwei, Wang, Xinran, Kang, Kibum, Orgiu, Emanuele, Samorì, Paolo, Watanabe, Kenji, Taniguchi, Takashi, Tsukagoshi, Kazuhito, Wang, Peng, Shi, Yi, Li, Songlin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8983769/
https://www.ncbi.nlm.nih.gov/pubmed/35383178
http://dx.doi.org/10.1038/s41467-022-29447-6
_version_ 1784682030758363136
author Zhou, Jian
Zhang, Chunchen
Shi, Li
Chen, Xiaoqing
Kim, Tae Soo
Gyeon, Minseung
Chen, Jian
Wang, Jinlan
Yu, Linwei
Wang, Xinran
Kang, Kibum
Orgiu, Emanuele
Samorì, Paolo
Watanabe, Kenji
Taniguchi, Takashi
Tsukagoshi, Kazuhito
Wang, Peng
Shi, Yi
Li, Songlin
author_facet Zhou, Jian
Zhang, Chunchen
Shi, Li
Chen, Xiaoqing
Kim, Tae Soo
Gyeon, Minseung
Chen, Jian
Wang, Jinlan
Yu, Linwei
Wang, Xinran
Kang, Kibum
Orgiu, Emanuele
Samorì, Paolo
Watanabe, Kenji
Taniguchi, Takashi
Tsukagoshi, Kazuhito
Wang, Peng
Shi, Yi
Li, Songlin
author_sort Zhou, Jian
collection PubMed
description The capability to finely tailor material thickness with simultaneous atomic precision and non-invasivity would be useful for constructing quantum platforms and post-Moore microelectronics. However, it remains challenging to attain synchronized controls over tailoring selectivity and precision. Here we report a protocol that allows for non-invasive and atomically digital etching of van der Waals transition-metal dichalcogenides through selective alloying via low-temperature thermal diffusion and subsequent wet etching. The mechanism of selective alloying between sacrifice metal atoms and defective or pristine dichalcogenides is analyzed with high-resolution scanning transmission electron microscopy. Also, the non-invasive nature and atomic level precision of our etching technique are corroborated by consistent spectral, crystallographic, and electrical characterization measurements. The low-temperature charge mobility of as-etched MoS(2) reaches up to 1200 cm(2) V(−1)s(−1), comparable to that of exfoliated pristine counterparts. The entire protocol represents a highly precise and non-invasive tailoring route for material manipulation.
format Online
Article
Text
id pubmed-8983769
institution National Center for Biotechnology Information
language English
publishDate 2022
publisher Nature Publishing Group UK
record_format MEDLINE/PubMed
spelling pubmed-89837692022-04-22 Non-invasive digital etching of van der Waals semiconductors Zhou, Jian Zhang, Chunchen Shi, Li Chen, Xiaoqing Kim, Tae Soo Gyeon, Minseung Chen, Jian Wang, Jinlan Yu, Linwei Wang, Xinran Kang, Kibum Orgiu, Emanuele Samorì, Paolo Watanabe, Kenji Taniguchi, Takashi Tsukagoshi, Kazuhito Wang, Peng Shi, Yi Li, Songlin Nat Commun Article The capability to finely tailor material thickness with simultaneous atomic precision and non-invasivity would be useful for constructing quantum platforms and post-Moore microelectronics. However, it remains challenging to attain synchronized controls over tailoring selectivity and precision. Here we report a protocol that allows for non-invasive and atomically digital etching of van der Waals transition-metal dichalcogenides through selective alloying via low-temperature thermal diffusion and subsequent wet etching. The mechanism of selective alloying between sacrifice metal atoms and defective or pristine dichalcogenides is analyzed with high-resolution scanning transmission electron microscopy. Also, the non-invasive nature and atomic level precision of our etching technique are corroborated by consistent spectral, crystallographic, and electrical characterization measurements. The low-temperature charge mobility of as-etched MoS(2) reaches up to 1200 cm(2) V(−1)s(−1), comparable to that of exfoliated pristine counterparts. The entire protocol represents a highly precise and non-invasive tailoring route for material manipulation. Nature Publishing Group UK 2022-04-05 /pmc/articles/PMC8983769/ /pubmed/35383178 http://dx.doi.org/10.1038/s41467-022-29447-6 Text en © The Author(s) 2022 https://creativecommons.org/licenses/by/4.0/Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) .
spellingShingle Article
Zhou, Jian
Zhang, Chunchen
Shi, Li
Chen, Xiaoqing
Kim, Tae Soo
Gyeon, Minseung
Chen, Jian
Wang, Jinlan
Yu, Linwei
Wang, Xinran
Kang, Kibum
Orgiu, Emanuele
Samorì, Paolo
Watanabe, Kenji
Taniguchi, Takashi
Tsukagoshi, Kazuhito
Wang, Peng
Shi, Yi
Li, Songlin
Non-invasive digital etching of van der Waals semiconductors
title Non-invasive digital etching of van der Waals semiconductors
title_full Non-invasive digital etching of van der Waals semiconductors
title_fullStr Non-invasive digital etching of van der Waals semiconductors
title_full_unstemmed Non-invasive digital etching of van der Waals semiconductors
title_short Non-invasive digital etching of van der Waals semiconductors
title_sort non-invasive digital etching of van der waals semiconductors
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8983769/
https://www.ncbi.nlm.nih.gov/pubmed/35383178
http://dx.doi.org/10.1038/s41467-022-29447-6
work_keys_str_mv AT zhoujian noninvasivedigitaletchingofvanderwaalssemiconductors
AT zhangchunchen noninvasivedigitaletchingofvanderwaalssemiconductors
AT shili noninvasivedigitaletchingofvanderwaalssemiconductors
AT chenxiaoqing noninvasivedigitaletchingofvanderwaalssemiconductors
AT kimtaesoo noninvasivedigitaletchingofvanderwaalssemiconductors
AT gyeonminseung noninvasivedigitaletchingofvanderwaalssemiconductors
AT chenjian noninvasivedigitaletchingofvanderwaalssemiconductors
AT wangjinlan noninvasivedigitaletchingofvanderwaalssemiconductors
AT yulinwei noninvasivedigitaletchingofvanderwaalssemiconductors
AT wangxinran noninvasivedigitaletchingofvanderwaalssemiconductors
AT kangkibum noninvasivedigitaletchingofvanderwaalssemiconductors
AT orgiuemanuele noninvasivedigitaletchingofvanderwaalssemiconductors
AT samoripaolo noninvasivedigitaletchingofvanderwaalssemiconductors
AT watanabekenji noninvasivedigitaletchingofvanderwaalssemiconductors
AT taniguchitakashi noninvasivedigitaletchingofvanderwaalssemiconductors
AT tsukagoshikazuhito noninvasivedigitaletchingofvanderwaalssemiconductors
AT wangpeng noninvasivedigitaletchingofvanderwaalssemiconductors
AT shiyi noninvasivedigitaletchingofvanderwaalssemiconductors
AT lisonglin noninvasivedigitaletchingofvanderwaalssemiconductors