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Non-invasive digital etching of van der Waals semiconductors
The capability to finely tailor material thickness with simultaneous atomic precision and non-invasivity would be useful for constructing quantum platforms and post-Moore microelectronics. However, it remains challenging to attain synchronized controls over tailoring selectivity and precision. Here...
Autores principales: | , , , , , , , , , , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2022
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8983769/ https://www.ncbi.nlm.nih.gov/pubmed/35383178 http://dx.doi.org/10.1038/s41467-022-29447-6 |
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author | Zhou, Jian Zhang, Chunchen Shi, Li Chen, Xiaoqing Kim, Tae Soo Gyeon, Minseung Chen, Jian Wang, Jinlan Yu, Linwei Wang, Xinran Kang, Kibum Orgiu, Emanuele Samorì, Paolo Watanabe, Kenji Taniguchi, Takashi Tsukagoshi, Kazuhito Wang, Peng Shi, Yi Li, Songlin |
author_facet | Zhou, Jian Zhang, Chunchen Shi, Li Chen, Xiaoqing Kim, Tae Soo Gyeon, Minseung Chen, Jian Wang, Jinlan Yu, Linwei Wang, Xinran Kang, Kibum Orgiu, Emanuele Samorì, Paolo Watanabe, Kenji Taniguchi, Takashi Tsukagoshi, Kazuhito Wang, Peng Shi, Yi Li, Songlin |
author_sort | Zhou, Jian |
collection | PubMed |
description | The capability to finely tailor material thickness with simultaneous atomic precision and non-invasivity would be useful for constructing quantum platforms and post-Moore microelectronics. However, it remains challenging to attain synchronized controls over tailoring selectivity and precision. Here we report a protocol that allows for non-invasive and atomically digital etching of van der Waals transition-metal dichalcogenides through selective alloying via low-temperature thermal diffusion and subsequent wet etching. The mechanism of selective alloying between sacrifice metal atoms and defective or pristine dichalcogenides is analyzed with high-resolution scanning transmission electron microscopy. Also, the non-invasive nature and atomic level precision of our etching technique are corroborated by consistent spectral, crystallographic, and electrical characterization measurements. The low-temperature charge mobility of as-etched MoS(2) reaches up to 1200 cm(2) V(−1)s(−1), comparable to that of exfoliated pristine counterparts. The entire protocol represents a highly precise and non-invasive tailoring route for material manipulation. |
format | Online Article Text |
id | pubmed-8983769 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2022 |
publisher | Nature Publishing Group UK |
record_format | MEDLINE/PubMed |
spelling | pubmed-89837692022-04-22 Non-invasive digital etching of van der Waals semiconductors Zhou, Jian Zhang, Chunchen Shi, Li Chen, Xiaoqing Kim, Tae Soo Gyeon, Minseung Chen, Jian Wang, Jinlan Yu, Linwei Wang, Xinran Kang, Kibum Orgiu, Emanuele Samorì, Paolo Watanabe, Kenji Taniguchi, Takashi Tsukagoshi, Kazuhito Wang, Peng Shi, Yi Li, Songlin Nat Commun Article The capability to finely tailor material thickness with simultaneous atomic precision and non-invasivity would be useful for constructing quantum platforms and post-Moore microelectronics. However, it remains challenging to attain synchronized controls over tailoring selectivity and precision. Here we report a protocol that allows for non-invasive and atomically digital etching of van der Waals transition-metal dichalcogenides through selective alloying via low-temperature thermal diffusion and subsequent wet etching. The mechanism of selective alloying between sacrifice metal atoms and defective or pristine dichalcogenides is analyzed with high-resolution scanning transmission electron microscopy. Also, the non-invasive nature and atomic level precision of our etching technique are corroborated by consistent spectral, crystallographic, and electrical characterization measurements. The low-temperature charge mobility of as-etched MoS(2) reaches up to 1200 cm(2) V(−1)s(−1), comparable to that of exfoliated pristine counterparts. The entire protocol represents a highly precise and non-invasive tailoring route for material manipulation. Nature Publishing Group UK 2022-04-05 /pmc/articles/PMC8983769/ /pubmed/35383178 http://dx.doi.org/10.1038/s41467-022-29447-6 Text en © The Author(s) 2022 https://creativecommons.org/licenses/by/4.0/Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) . |
spellingShingle | Article Zhou, Jian Zhang, Chunchen Shi, Li Chen, Xiaoqing Kim, Tae Soo Gyeon, Minseung Chen, Jian Wang, Jinlan Yu, Linwei Wang, Xinran Kang, Kibum Orgiu, Emanuele Samorì, Paolo Watanabe, Kenji Taniguchi, Takashi Tsukagoshi, Kazuhito Wang, Peng Shi, Yi Li, Songlin Non-invasive digital etching of van der Waals semiconductors |
title | Non-invasive digital etching of van der Waals semiconductors |
title_full | Non-invasive digital etching of van der Waals semiconductors |
title_fullStr | Non-invasive digital etching of van der Waals semiconductors |
title_full_unstemmed | Non-invasive digital etching of van der Waals semiconductors |
title_short | Non-invasive digital etching of van der Waals semiconductors |
title_sort | non-invasive digital etching of van der waals semiconductors |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8983769/ https://www.ncbi.nlm.nih.gov/pubmed/35383178 http://dx.doi.org/10.1038/s41467-022-29447-6 |
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