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Evaluation of the microstructure, optical properties and hopping conduction mechanism of rare earth doped Ba(0.85)Ca(0.12)RE(0.03)Ti(0.90)Zr(0.04)Nb(0.042)O(3) ceramics (RE = Ce(3+) and Pr(3+))

The current research work examines the impact of Rare Earth (RE(3+)) ion substitution on the structural, optical and conduction properties of a Ba(0.85)Ca(0.12)RE(0.03)Ti(0.90)Zr(0.04)Nb(0.042)O(3) (BCRETZN) (RE = Ce, Pr) ceramic compound produced via a solid-state route. The Rietveld method of the...

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Detalles Bibliográficos
Autores principales: Bourguiba, M., Raddaoui, Z., Dimassi, W., Chafra, M., Dhahri, J., Marchet, P., Garcia, M. A.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8985106/
https://www.ncbi.nlm.nih.gov/pubmed/35424995
http://dx.doi.org/10.1039/d2ra01068b
Descripción
Sumario:The current research work examines the impact of Rare Earth (RE(3+)) ion substitution on the structural, optical and conduction properties of a Ba(0.85)Ca(0.12)RE(0.03)Ti(0.90)Zr(0.04)Nb(0.042)O(3) (BCRETZN) (RE = Ce, Pr) ceramic compound produced via a solid-state route. The Rietveld method of the X-ray data revealed a tetragonal (P4mm) structure at room temperature for our ceramic compound. The morphology of the compound was explored using Scanning Electron Microscopy (SEM) as well as optical response and conduction behavior. The photoluminescence properties revealed that the BCPrTZN sample results in green and red photoemissions under laser excitation at 450 nm at RT. Furthermore, for the BCCeTZN sample, the photoluminescence data demonstrated that strong violet emission bands were acquired, at RT upon an excitation at 350 nm. The electrical conduction process was verified via the correlated barrier Hopping method. The scaling behavior suggests that the electrical conduction mechanism is independent of temperature. The existence of Ce(3+) and Pr(3+) ions in these materials could have important technological potential in new multifunctional devices.