Silicon Passivation by Ultrathin Hafnium Oxide Layer for Photoelectrochemical Applications

Hafnium oxide (HfO(2)) films on silicon have the potential for application in photovoltaic devices. However, very little is known about the photoelectrochemical and protective properties of HfO(2) films on Si. In this study, ultrathin films of HfO(2) in the range of 15–70 nm were deposited on p-Si a...

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Detalles Bibliográficos
Autores principales: Staišiūnas, Laurynas, Kalinauskas, Putinas, Juzeliūnas, Eimutis, Grigucevičienė, Asta, Leinartas, Konstantinas, Niaura, Gediminas, Stanionytė, Sandra, Selskis, Algirdas
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Frontiers Media S.A. 2022
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8990804/
https://www.ncbi.nlm.nih.gov/pubmed/35402375
http://dx.doi.org/10.3389/fchem.2022.859023

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8990804/
https://www.ncbi.nlm.nih.gov/pubmed/35402375
http://dx.doi.org/10.3389/fchem.2022.859023

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