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Silicon Passivation by Ultrathin Hafnium Oxide Layer for Photoelectrochemical Applications
Hafnium oxide (HfO(2)) films on silicon have the potential for application in photovoltaic devices. However, very little is known about the photoelectrochemical and protective properties of HfO(2) films on Si. In this study, ultrathin films of HfO(2) in the range of 15–70 nm were deposited on p-Si a...
| Autores principales: | , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Frontiers Media S.A.
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8990804/ https://www.ncbi.nlm.nih.gov/pubmed/35402375 http://dx.doi.org/10.3389/fchem.2022.859023 |