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First-Principles Study of Electronic Properties of Substitutionally Doped Monolayer SnP(3)

SnP(3) has a great prospect in electronic and thermoelectric device applications due to its moderate band gap, high carrier mobility, absorption coefficients, and dynamical and chemical stability. Doping in two-dimensional semiconductors is likely to display various anomalous behaviors when compared...

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Detalles Bibliográficos
Autores principales:	Zhang, Ningxia, Li, Xiaodan, Ruan, Shihao, Chen, Xiong, Li, Shenghao, Hu, Taotao
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2022
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8999696/ https://www.ncbi.nlm.nih.gov/pubmed/35407794 http://dx.doi.org/10.3390/ma15072462

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