Quad-Level Cell Switching with Excellent Reliability in TiN/AlOx:Ti/TaOx/TiN Memory Device

TiN/AlO(x):Ti/TaO(x)/TiN memory devices using bilayer resistive switching memory demonstrated excellent durability and capability of QLC (quad-level cell) memory devices. The best nonvolatile memory characteristics with the lowest operation current and optimized 4 bit/cell states were obtained using...

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Detalles Bibliográficos
Autores principales: Shin, Hee Ju, Seo, Hyun Kyu, Lee, Su Yeon, Park, Minsoo, Park, Seong-Geon, Yang, Min Kyu
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8999717/
https://www.ncbi.nlm.nih.gov/pubmed/35407734
http://dx.doi.org/10.3390/ma15072402
Descripción
Sumario:TiN/AlO(x):Ti/TaO(x)/TiN memory devices using bilayer resistive switching memory demonstrated excellent durability and capability of QLC (quad-level cell) memory devices. The best nonvolatile memory characteristics with the lowest operation current and optimized 4 bit/cell states were obtained using the Incremental Step Pulse Programming (ISPP) algorithm in array. As a result, a superior QLC reliability (cycle endurance > 1 k at each level of the QLC, data retention > 2 h at 125 °C) for all the 4 bits/cell operations was achieved in sub-μm scaled RRAM (resistive random access memory) devices.

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