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Quad-Level Cell Switching with Excellent Reliability in TiN/AlOx:Ti/TaOx/TiN Memory Device
TiN/AlO(x):Ti/TaO(x)/TiN memory devices using bilayer resistive switching memory demonstrated excellent durability and capability of QLC (quad-level cell) memory devices. The best nonvolatile memory characteristics with the lowest operation current and optimized 4 bit/cell states were obtained using...
Autores principales: | Shin, Hee Ju, Seo, Hyun Kyu, Lee, Su Yeon, Park, Minsoo, Park, Seong-Geon, Yang, Min Kyu |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2022
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8999717/ https://www.ncbi.nlm.nih.gov/pubmed/35407734 http://dx.doi.org/10.3390/ma15072402 |
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