Cargando…
Physical Operations of a Self-Powered IZTO/β-Ga(2)O(3) Schottky Barrier Diode Photodetector
In this work, a self-powered, solar-blind photodetector, based on InZnSnO (IZTO) as a Schottky contact, was deposited on the top of Si-doped β-Ga(2)O(3) by the sputtering of two-faced targets with InSnO (ITO) as an ohmic contact. A detailed numerical simulation was performed by using the measured J–...
Autores principales: | Labed, Madani, Kim, Hojoong, Park, Joon Hui, Labed, Mohamed, Meftah, Afak, Sengouga, Nouredine, Rim, You Seung |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2022
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9000755/ https://www.ncbi.nlm.nih.gov/pubmed/35407179 http://dx.doi.org/10.3390/nano12071061 |
Ejemplares similares
-
Control of Ni/β-Ga(2)O(3) Vertical Schottky Diode Output Parameters at Forward Bias by Insertion of a Graphene Layer
por: Labed, Madani, et al.
Publicado: (2022) -
Fabrication of Ga(2)O(3) Schottky Barrier Diode and Heterojunction Diode by MOCVD
por: Jiao, Teng, et al.
Publicado: (2022) -
Investigation on Dynamic Characteristics of AlGaN/GaN Lateral Schottky Barrier Diode
por: Zhang, Haitao, et al.
Publicado: (2021) -
Recovery Performance of Ge-Doped Vertical GaN Schottky Barrier Diodes
por: Gu, Hong, et al.
Publicado: (2019) -
Electrical Characterizations of Planar Ga(2)O(3) Schottky Barrier Diodes
por: Zhang, Shiyu, et al.
Publicado: (2021)