Sensitivity Enhancement of Dual Gate FET Based Biosensor Using Modulated Dielectric for Covid Detection

This paper presents a dual gate dielectric modulated FET (DGDMFET) biosensor with enhanced sensitivity for covid detection. In earlier literature, the biosensors are operated using the surface interaction with the virus biomolecules that are reflected through a channel or gate. The downside of these types of sensors has limited sensitivity. In this paper, we have considered that the change in the dielectric constant due to virus proteins results in a significant shift in the threshold voltage of FET. Enhancement of sensitivity is done by using the novel dual metal gate arrangement with different work functions (higher at the source end and lower at the drain end) and the chromic oxide (Cr(2)O(3)) layer, which is carved out vertically to form nanogap. At the same time, interface charge density is maintained nearly equal to 1.0 × 10(11) cm(−2) at the Si-SiO(2) layer. To demonstrate the proposed biosensor, electrical parameters (electron concentration, surface potential, energy band distribution, and electric field) and the absolute percentage sensitivity of threshold voltage, subthreshold slope, ON current, and transconductance are evaluated and compared with related literature. The ATLAS device simulator is used for the simulation of the proposed device.