Snapback-Free Reverse-Conducting SOI LIGBT with an Integrated Self-Biased MOSFET

A novel snapback-free RC-LIGBT with integrated self-biased N-MOSFET is proposed and investigated by simulation. The device features an integrated self-biased N-MOSFET(ISM) on the anode active region. One side of the ISM is shorted to the P + anode electrode of RC-LIGBT and the other side is connecte...

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Detalles Bibliográficos
Autores principales: Yang, Kemeng, Wei, Jie, Dai, Kaiwei, Ma, Zhen, Li, Congcong, Luo, Xiaorong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2022
Materias:
Research
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9016105/
https://www.ncbi.nlm.nih.gov/pubmed/35435523
http://dx.doi.org/10.1186/s11671-022-03685-5

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9016105/
https://www.ncbi.nlm.nih.gov/pubmed/35435523
http://dx.doi.org/10.1186/s11671-022-03685-5

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