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Bound states at partial dislocation defects in multipole higher-order topological insulators
The bulk-boundary correspondence, which links a bulk topological property of a material to the existence of robust boundary states, is a hallmark of topological insulators. However, in crystalline topological materials the presence of boundary states in the insulating gap is not always necessary sin...
Autores principales: | , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2022
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9018851/ https://www.ncbi.nlm.nih.gov/pubmed/35440648 http://dx.doi.org/10.1038/s41467-022-29785-5 |
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author | Yamada, Sasha S. Li, Tianhe Lin, Mao Peterson, Christopher W. Hughes, Taylor L. Bahl, Gaurav |
author_facet | Yamada, Sasha S. Li, Tianhe Lin, Mao Peterson, Christopher W. Hughes, Taylor L. Bahl, Gaurav |
author_sort | Yamada, Sasha S. |
collection | PubMed |
description | The bulk-boundary correspondence, which links a bulk topological property of a material to the existence of robust boundary states, is a hallmark of topological insulators. However, in crystalline topological materials the presence of boundary states in the insulating gap is not always necessary since they can be hidden in the bulk energy bands, obscured by boundary artifacts of non-topological origin, or, in the case of higher-order topology, they can be gapped altogether. Recently, exotic defects of translation symmetry called partial dislocations have been proposed to trap gapless topological modes in some materials. Here we present experimental observations of partial-dislocation-induced topological modes in 2D and 3D insulators. We particularly focus on multipole higher-order topological insulators built from circuit-based resonator arrays, since crucially they are not sensitive to full dislocation defects, and they have a sublattice structure allowing for stacking faults and partial dislocations. |
format | Online Article Text |
id | pubmed-9018851 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2022 |
publisher | Nature Publishing Group UK |
record_format | MEDLINE/PubMed |
spelling | pubmed-90188512022-04-28 Bound states at partial dislocation defects in multipole higher-order topological insulators Yamada, Sasha S. Li, Tianhe Lin, Mao Peterson, Christopher W. Hughes, Taylor L. Bahl, Gaurav Nat Commun Article The bulk-boundary correspondence, which links a bulk topological property of a material to the existence of robust boundary states, is a hallmark of topological insulators. However, in crystalline topological materials the presence of boundary states in the insulating gap is not always necessary since they can be hidden in the bulk energy bands, obscured by boundary artifacts of non-topological origin, or, in the case of higher-order topology, they can be gapped altogether. Recently, exotic defects of translation symmetry called partial dislocations have been proposed to trap gapless topological modes in some materials. Here we present experimental observations of partial-dislocation-induced topological modes in 2D and 3D insulators. We particularly focus on multipole higher-order topological insulators built from circuit-based resonator arrays, since crucially they are not sensitive to full dislocation defects, and they have a sublattice structure allowing for stacking faults and partial dislocations. Nature Publishing Group UK 2022-04-19 /pmc/articles/PMC9018851/ /pubmed/35440648 http://dx.doi.org/10.1038/s41467-022-29785-5 Text en © The Author(s) 2022 https://creativecommons.org/licenses/by/4.0/Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) . |
spellingShingle | Article Yamada, Sasha S. Li, Tianhe Lin, Mao Peterson, Christopher W. Hughes, Taylor L. Bahl, Gaurav Bound states at partial dislocation defects in multipole higher-order topological insulators |
title | Bound states at partial dislocation defects in multipole higher-order topological insulators |
title_full | Bound states at partial dislocation defects in multipole higher-order topological insulators |
title_fullStr | Bound states at partial dislocation defects in multipole higher-order topological insulators |
title_full_unstemmed | Bound states at partial dislocation defects in multipole higher-order topological insulators |
title_short | Bound states at partial dislocation defects in multipole higher-order topological insulators |
title_sort | bound states at partial dislocation defects in multipole higher-order topological insulators |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9018851/ https://www.ncbi.nlm.nih.gov/pubmed/35440648 http://dx.doi.org/10.1038/s41467-022-29785-5 |
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