Surface Recombination and Space-Charge-Limited Photocurrent-Voltage (PC-V) Measurements in (Cd,Mn)Te Samples–Kinetics of Photocurrent (PC)

Photocurrent-voltage characteristic (PC-V) is a method of determining the critical parameter in X-ray and gamma-ray detector plates, i.e., the carrier mobility-lifetime product, μτ. We show for the (Cd,Mn)Te samples that the measurement results depend strongly on the surface treatment and the space...

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Detalles Bibliográficos
Autores principales: Mycielski, Andrzej, Kochanowska, Dominika M., Wardak, Aneta, Gościński, Krzysztof, Szot, Michał, Dobrowolski, Witold, Janusz, Gabriela, Górska, Małgorzata, Janiak, Łukasz, Czarnacki, Wiesław, Świderski, Łukasz, Iwanowska-Hanke, Joanna, Moszyński, Marek
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9025204/
https://www.ncbi.nlm.nih.gov/pubmed/35458925
http://dx.doi.org/10.3390/s22082941
Descripción
Sumario:Photocurrent-voltage characteristic (PC-V) is a method of determining the critical parameter in X-ray and gamma-ray detector plates, i.e., the carrier mobility-lifetime product, μτ. We show for the (Cd,Mn)Te samples that the measurement results depend strongly on the surface treatment and the space charge distribution. The PC-V characteristics obtained for ħω > E(g) and ħω ~ E(g) indicated that etching with 20% HCl caused an appearance of a significant concentration of very shallow surface traps at the (Cd,Mn)Te sample surface. These traps seriously changed the results of measurements of PC-V characteristics and PC kinetics. We also noticed a small contribution of holes to photoconductivity in the PC kinetics. The measurements of PC-V characteristics for ħω > E(g) may test the detector plate surface quality.

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