Radiation Hardness Study of Single-Photon Avalanche Diode for Space and High Energy Physics Applications

The radiation hardness of 180 nm complementary metal–oxide–semiconductor (CMOS) and 55 nm bipolar–CMOS–double-diffused MOS single-photon avalanche diodes (SPADs) is studied using 10 MeV and 100 MeV protons up to a displacement damage dose of 1 PeV/g. It is found that the dark count rate (DCR) levels...

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Detalles Bibliográficos
Autores principales: Wu, Ming-Lo, Ripiccini, Emanuele, Kizilkan, Ekin, Gramuglia, Francesco, Keshavarzian, Pouyan, Fenoglio, Carlo Alberto, Morimoto, Kazuhiro, Charbon, Edoardo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9025377/
https://www.ncbi.nlm.nih.gov/pubmed/35458904
http://dx.doi.org/10.3390/s22082919

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9025377/
https://www.ncbi.nlm.nih.gov/pubmed/35458904
http://dx.doi.org/10.3390/s22082919

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