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High-speed 2D and 3D mid-IR imaging with an InGaAs camera

Recent work on mid-infrared (MIR) detection through the process of non-degenerate two-photon absorption (NTA) in semiconducting materials has shown that wide-field MIR imaging can be achieved with standard Si cameras. While this approach enables MIR imaging at high pixel densities, the low nonlinear...

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Detalles Bibliográficos
Autores principales: Potma, Eric O., Knez, David, Ettenberg, Martin, Wizeman, Matthew, Nguyen, Hai, Sudol, Tom, Fishman, Dmitry A.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: AIP Publishing LLC 2021
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9026176/
https://www.ncbi.nlm.nih.gov/pubmed/35498553
http://dx.doi.org/10.1063/5.0061661
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author Potma, Eric O.
Knez, David
Ettenberg, Martin
Wizeman, Matthew
Nguyen, Hai
Sudol, Tom
Fishman, Dmitry A.
author_facet Potma, Eric O.
Knez, David
Ettenberg, Martin
Wizeman, Matthew
Nguyen, Hai
Sudol, Tom
Fishman, Dmitry A.
author_sort Potma, Eric O.
collection PubMed
description Recent work on mid-infrared (MIR) detection through the process of non-degenerate two-photon absorption (NTA) in semiconducting materials has shown that wide-field MIR imaging can be achieved with standard Si cameras. While this approach enables MIR imaging at high pixel densities, the low nonlinear absorption coefficient of Si prevents fast NTA-based imaging at lower illumination doses. Here, we overcome this limitation by using InGaAs as the photosensor. Taking advantage of the much higher nonlinear absorption coefficient of this direct bandgap semiconductor, we demonstrate high-speed MIR imaging up to 500 fps with under 1 ms exposure per frame, enabling 2D or 3D mapping without pre- or post-processing of the image.
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spelling pubmed-90261762022-04-29 High-speed 2D and 3D mid-IR imaging with an InGaAs camera Potma, Eric O. Knez, David Ettenberg, Martin Wizeman, Matthew Nguyen, Hai Sudol, Tom Fishman, Dmitry A. APL Photonics Articles Recent work on mid-infrared (MIR) detection through the process of non-degenerate two-photon absorption (NTA) in semiconducting materials has shown that wide-field MIR imaging can be achieved with standard Si cameras. While this approach enables MIR imaging at high pixel densities, the low nonlinear absorption coefficient of Si prevents fast NTA-based imaging at lower illumination doses. Here, we overcome this limitation by using InGaAs as the photosensor. Taking advantage of the much higher nonlinear absorption coefficient of this direct bandgap semiconductor, we demonstrate high-speed MIR imaging up to 500 fps with under 1 ms exposure per frame, enabling 2D or 3D mapping without pre- or post-processing of the image. AIP Publishing LLC 2021-09-01 2021-09-22 /pmc/articles/PMC9026176/ /pubmed/35498553 http://dx.doi.org/10.1063/5.0061661 Text en © 2021 Author(s). https://creativecommons.org/licenses/by/4.0/All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) ).
spellingShingle Articles
Potma, Eric O.
Knez, David
Ettenberg, Martin
Wizeman, Matthew
Nguyen, Hai
Sudol, Tom
Fishman, Dmitry A.
High-speed 2D and 3D mid-IR imaging with an InGaAs camera
title High-speed 2D and 3D mid-IR imaging with an InGaAs camera
title_full High-speed 2D and 3D mid-IR imaging with an InGaAs camera
title_fullStr High-speed 2D and 3D mid-IR imaging with an InGaAs camera
title_full_unstemmed High-speed 2D and 3D mid-IR imaging with an InGaAs camera
title_short High-speed 2D and 3D mid-IR imaging with an InGaAs camera
title_sort high-speed 2d and 3d mid-ir imaging with an ingaas camera
topic Articles
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9026176/
https://www.ncbi.nlm.nih.gov/pubmed/35498553
http://dx.doi.org/10.1063/5.0061661
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