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Chlorine-Infused Wide-Band Gap p-CuSCN/n-GaN Heterojunction Ultraviolet-Light Photodetectors

[Image: see text] Copper thiocyanate (CuSCN) is a p-type semiconductor that exhibits hole-transport and wide-band gap (∼3.9 eV) characteristics. However, the conductivity of CuSCN is not sufficiently high, which limits its potential application in optoelectronic devices. Herein, CuSCN thin films wer...

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Detalles Bibliográficos
Autores principales: Liang, Jian-Wei, Firdaus, Yuliar, Kang, Chun Hong, Min, Jung-Wook, Min, Jung-Hong, Al Ibrahim, Redha H., Wehbe, Nimer, Hedhili, Mohamed Nejib, Kaltsas, Dimitrios, Tsetseris, Leonidas, Lopatin, Sergei, Zheng, Shuiqin, Ng, Tien Khee, Anthopoulos, Thomas D., Ooi, Boon S.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2022
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9026266/
https://www.ncbi.nlm.nih.gov/pubmed/35404567
http://dx.doi.org/10.1021/acsami.1c22075
Descripción
Sumario:[Image: see text] Copper thiocyanate (CuSCN) is a p-type semiconductor that exhibits hole-transport and wide-band gap (∼3.9 eV) characteristics. However, the conductivity of CuSCN is not sufficiently high, which limits its potential application in optoelectronic devices. Herein, CuSCN thin films were exposed to chlorine using a dry etching system to enhance their electrical properties, yielding a maximum hole concentration of 3 × 10(18) cm(–3). The p-type CuSCN layer was then deposited onto an n-type gallium nitride (GaN) layer to form a prototypical ultraviolet-based photodetector. X-ray photoelectron spectroscopy further demonstrated the interface electronic structures of the heterojunction, confirming a favorable alignment for holes and electrons transport. The ensuing p-CuSCN/n-GaN heterojunction photodetector exhibited a turn-on voltage of 2.3 V, a responsivity of 1.35 A/W at −1 V, and an external quantum efficiency of 5.14 × 10(2)% under illumination with ultraviolet light (peak wavelength of 330 nm). The work opens a new pathway for making a plethora of hybrid optoelectronic devices of inorganic and organic nature by using p-type CuSCN as the hole injection layer.