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Design and Simulation of Logic-In-Memory Inverter Based on a Silicon Nanowire Feedback Field-Effect Transistor

In this paper, we propose a logic-in-memory (LIM) inverter comprising a silicon nanowire (SiNW) n-channel feedback field-effect transistor (n-FBFET) and a SiNW p-channel metal oxide semiconductor field-effect transistor (p-MOSFET). The hybrid logic and memory operations of the LIM inverter were inve...

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Detalles Bibliográficos
Autores principales:	Baek, Eunwoo, Son, Jaemin, Cho, Kyoungah, Kim, Sangsig
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2022
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9028487/ https://www.ncbi.nlm.nih.gov/pubmed/35457895 http://dx.doi.org/10.3390/mi13040590

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