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Review-Hysteresis in Carbon Nano-Structure Field Effect Transistor

In recent decades, the research of nano-structure devices (e.g., carbon nanotube and graphene) has experienced rapid growth. These materials have supreme electronic, thermal, optical and mechanical properties and have received widespread concern in different fields. It is worth noting that gate hyst...

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Autores principales: Lu, Yu-Xuan, Lin, Chih-Ting, Tsai, Ming-Hsui, Lin, Kuan-Chou
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9029578/
https://www.ncbi.nlm.nih.gov/pubmed/35457813
http://dx.doi.org/10.3390/mi13040509
_version_ 1784691913240084480
author Lu, Yu-Xuan
Lin, Chih-Ting
Tsai, Ming-Hsui
Lin, Kuan-Chou
author_facet Lu, Yu-Xuan
Lin, Chih-Ting
Tsai, Ming-Hsui
Lin, Kuan-Chou
author_sort Lu, Yu-Xuan
collection PubMed
description In recent decades, the research of nano-structure devices (e.g., carbon nanotube and graphene) has experienced rapid growth. These materials have supreme electronic, thermal, optical and mechanical properties and have received widespread concern in different fields. It is worth noting that gate hysteresis behavior of field effect transistors can always be found in ambient conditions, which may influence the transmission appearance. Many researchers have put forward various views on this question. Here, we summarize and discuss the mechanisms behind hysteresis, different influencing factors and improvement methods which help decrease or eliminate unevenness and asymmetry.
format Online
Article
Text
id pubmed-9029578
institution National Center for Biotechnology Information
language English
publishDate 2022
publisher MDPI
record_format MEDLINE/PubMed
spelling pubmed-90295782022-04-23 Review-Hysteresis in Carbon Nano-Structure Field Effect Transistor Lu, Yu-Xuan Lin, Chih-Ting Tsai, Ming-Hsui Lin, Kuan-Chou Micromachines (Basel) Review In recent decades, the research of nano-structure devices (e.g., carbon nanotube and graphene) has experienced rapid growth. These materials have supreme electronic, thermal, optical and mechanical properties and have received widespread concern in different fields. It is worth noting that gate hysteresis behavior of field effect transistors can always be found in ambient conditions, which may influence the transmission appearance. Many researchers have put forward various views on this question. Here, we summarize and discuss the mechanisms behind hysteresis, different influencing factors and improvement methods which help decrease or eliminate unevenness and asymmetry. MDPI 2022-03-25 /pmc/articles/PMC9029578/ /pubmed/35457813 http://dx.doi.org/10.3390/mi13040509 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Review
Lu, Yu-Xuan
Lin, Chih-Ting
Tsai, Ming-Hsui
Lin, Kuan-Chou
Review-Hysteresis in Carbon Nano-Structure Field Effect Transistor
title Review-Hysteresis in Carbon Nano-Structure Field Effect Transistor
title_full Review-Hysteresis in Carbon Nano-Structure Field Effect Transistor
title_fullStr Review-Hysteresis in Carbon Nano-Structure Field Effect Transistor
title_full_unstemmed Review-Hysteresis in Carbon Nano-Structure Field Effect Transistor
title_short Review-Hysteresis in Carbon Nano-Structure Field Effect Transistor
title_sort review-hysteresis in carbon nano-structure field effect transistor
topic Review
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9029578/
https://www.ncbi.nlm.nih.gov/pubmed/35457813
http://dx.doi.org/10.3390/mi13040509
work_keys_str_mv AT luyuxuan reviewhysteresisincarbonnanostructurefieldeffecttransistor
AT linchihting reviewhysteresisincarbonnanostructurefieldeffecttransistor
AT tsaiminghsui reviewhysteresisincarbonnanostructurefieldeffecttransistor
AT linkuanchou reviewhysteresisincarbonnanostructurefieldeffecttransistor