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Review-Hysteresis in Carbon Nano-Structure Field Effect Transistor
In recent decades, the research of nano-structure devices (e.g., carbon nanotube and graphene) has experienced rapid growth. These materials have supreme electronic, thermal, optical and mechanical properties and have received widespread concern in different fields. It is worth noting that gate hyst...
Autores principales: | , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2022
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9029578/ https://www.ncbi.nlm.nih.gov/pubmed/35457813 http://dx.doi.org/10.3390/mi13040509 |
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author | Lu, Yu-Xuan Lin, Chih-Ting Tsai, Ming-Hsui Lin, Kuan-Chou |
author_facet | Lu, Yu-Xuan Lin, Chih-Ting Tsai, Ming-Hsui Lin, Kuan-Chou |
author_sort | Lu, Yu-Xuan |
collection | PubMed |
description | In recent decades, the research of nano-structure devices (e.g., carbon nanotube and graphene) has experienced rapid growth. These materials have supreme electronic, thermal, optical and mechanical properties and have received widespread concern in different fields. It is worth noting that gate hysteresis behavior of field effect transistors can always be found in ambient conditions, which may influence the transmission appearance. Many researchers have put forward various views on this question. Here, we summarize and discuss the mechanisms behind hysteresis, different influencing factors and improvement methods which help decrease or eliminate unevenness and asymmetry. |
format | Online Article Text |
id | pubmed-9029578 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2022 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-90295782022-04-23 Review-Hysteresis in Carbon Nano-Structure Field Effect Transistor Lu, Yu-Xuan Lin, Chih-Ting Tsai, Ming-Hsui Lin, Kuan-Chou Micromachines (Basel) Review In recent decades, the research of nano-structure devices (e.g., carbon nanotube and graphene) has experienced rapid growth. These materials have supreme electronic, thermal, optical and mechanical properties and have received widespread concern in different fields. It is worth noting that gate hysteresis behavior of field effect transistors can always be found in ambient conditions, which may influence the transmission appearance. Many researchers have put forward various views on this question. Here, we summarize and discuss the mechanisms behind hysteresis, different influencing factors and improvement methods which help decrease or eliminate unevenness and asymmetry. MDPI 2022-03-25 /pmc/articles/PMC9029578/ /pubmed/35457813 http://dx.doi.org/10.3390/mi13040509 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Review Lu, Yu-Xuan Lin, Chih-Ting Tsai, Ming-Hsui Lin, Kuan-Chou Review-Hysteresis in Carbon Nano-Structure Field Effect Transistor |
title | Review-Hysteresis in Carbon Nano-Structure Field Effect Transistor |
title_full | Review-Hysteresis in Carbon Nano-Structure Field Effect Transistor |
title_fullStr | Review-Hysteresis in Carbon Nano-Structure Field Effect Transistor |
title_full_unstemmed | Review-Hysteresis in Carbon Nano-Structure Field Effect Transistor |
title_short | Review-Hysteresis in Carbon Nano-Structure Field Effect Transistor |
title_sort | review-hysteresis in carbon nano-structure field effect transistor |
topic | Review |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9029578/ https://www.ncbi.nlm.nih.gov/pubmed/35457813 http://dx.doi.org/10.3390/mi13040509 |
work_keys_str_mv | AT luyuxuan reviewhysteresisincarbonnanostructurefieldeffecttransistor AT linchihting reviewhysteresisincarbonnanostructurefieldeffecttransistor AT tsaiminghsui reviewhysteresisincarbonnanostructurefieldeffecttransistor AT linkuanchou reviewhysteresisincarbonnanostructurefieldeffecttransistor |