Charge-Trapping-Induced Hysteresis Effects in Highly Doped Silicon Metal–Oxide–Semiconductor Structures

It is shown that a simple metal–oxide–semiconductor (MOS) structure with highly doped silicon substrate can exhibit current–voltage hysteresis effects related to sudden rises and drops in the flowing electric current. Experimental current–voltage characteristics of Al-SiO(2)-(n++Si) structures are p...

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Detalles Bibliográficos
Autores principales: Wiśniewski, Piotr, Majkusiak, Bogdan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9029991/
https://www.ncbi.nlm.nih.gov/pubmed/35454426
http://dx.doi.org/10.3390/ma15082733

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9029991/
https://www.ncbi.nlm.nih.gov/pubmed/35454426
http://dx.doi.org/10.3390/ma15082733

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