Cargando…
Charge-Trapping-Induced Hysteresis Effects in Highly Doped Silicon Metal–Oxide–Semiconductor Structures
It is shown that a simple metal–oxide–semiconductor (MOS) structure with highly doped silicon substrate can exhibit current–voltage hysteresis effects related to sudden rises and drops in the flowing electric current. Experimental current–voltage characteristics of Al-SiO(2)-(n++Si) structures are p...
| Autores principales: | , |
|---|---|
| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2022
|
| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9029991/ https://www.ncbi.nlm.nih.gov/pubmed/35454426 http://dx.doi.org/10.3390/ma15082733 |