Optimization of Atmospheric Pressure Plasma Jet with Single-Pin Electrode Configuration and Its Application in Polyaniline Thin Film Growth

This study systematically investigated an atmospheric pressure plasma reactor with a centered single pin electrode inside a dielectric tube for depositing the polyaniline (PANI) thin film based on the experimental case studies relative to variations in pin electrode configurations (cases I, II, and III), bluff-body heights, and argon (Ar) gas flow rates. In these cases, the intensified charge-coupled device and optical emission spectroscopy were analyzed to investigate the factors affecting intensive glow-like plasma generation for deposition with a large area. Compared to case I, the intense glow-like plasma of the cases II and III generated abundant reactive nitrogen species (RNSs) and excited argon radical species for fragmentation and recombination of PANI. In case III, the film thickness and deposition rate of the PANI thin film were about 450 nm and 7.5 nm/min, respectively. This increase may imply that the increase in the excited radical species contributes to the fragmentation and recombination due to the increase in RNSs and excited argon radicals during the atmospheric pressure (AP) plasma polymerization to obtain the PANI thin film. This intense glow-like plasma generated broadly by the AP plasma reactor can uniformly deposit the PANI thin film, which is confirmed by field emission-scanning electron microscopy and Fourier transform infrared spectroscopy.