A dual-functional Ta/TaO(x)/Ru device with both nonlinear selector and resistive switching behaviors

In this work, we demonstrate that a Ta/TaO(x)/Ru device can act as both a highly uniform and nonlinear selection device and a stable resistive switching device, respectively, by controlling the voltage applied to the Ta electrode. As a selection device, it shows high selectivity (10(3)), high current density (25 kA cm(−2)), very low variation, and good endurance. The non-linear performance of the device may be attributed to a trapezoidal band structure modulated by the concentration gradient of oxygen vacancies. Furthermore, with a large voltage bias on the Ta electrode, a repeatable and stable resistive switching behavior was observed, which could be attributed to the formation of conductive filaments probably composed of Ta metal and oxygen vacancies. This research deepens the understanding of the mechanism of Ta/TaO(x) devices, and provides a potential solution for large-scale memristor arrays.